SBC847CLT1G Allicdata Electronics
Allicdata Part #:

SBC847CLT1GOSTR-ND

Manufacturer Part#:

SBC847CLT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300m...
DataSheet: SBC847CLT1G datasheetSBC847CLT1G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04220
6000 +: $ 0.03798
15000 +: $ 0.03376
30000 +: $ 0.03165
75000 +: $ 0.02814
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The SBC847CLT1G is a general-purpose bipolar junction transistors (BJTs) designed with a long-lifetime bipolar NPN technology and high breakdown voltage. It is suitable for a variety of applications such as general-purpose switching and amplification as well as high-speed switching.

The SBC847CLT1G is a single bipolar junction transistor which belongs to the class of discrete semiconductor devices called BJTs. It has three terminals: the collector, base and emitter. The collector-emitter junction is a PN junction and the base-emitter junction is a NPN junction. It is most commonly used either as a switch or amplifier.

As a switch, the SBC847CLT1G can be used to control an electrical current flow between collector and emitter. When the current flowing through the base terminal is high, the emitter to collector current is also high, this is known as saturation. When the current flowing through the base terminal is low, no current flows between the collector and emitter, this is known as cut-off.

In its active region, the SBC847CLT1G is used as an amplifier. The current flowing through the base terminal results in a current gain between the collector and emitter, which can be controlled using a voltage divider in the base terminal. This is known as current amplification; the effect of a small base current is magnified to the collector current. It is important to note that the current gain is affected by temperature and other physical parameters of the device.

The SBC847CLT1G offers a wide range of applications as a switch or amplifier due to its low power consumption, high reliability and long lifetime. Its maximum ratings make it suitable for high-voltage and high-current applications, such as switching and amplification of audio signals. It is also used in automotive applications, such as in CD players and DVD players. It can also be used in telecommunication circuits, such as in modems or computers. Additionally, it can be used in high-speed switching applications, such as in digital signal processing and direct digital synthesis.

Overall, the SBC847CLT1G is an NPN bipolar junction transistors with a high breakdown voltage and a long lifetime. Its wide range of applications as a switch or amplifier make it suitable for a variety of applications, such as audio signal switching and amplification, telecommunication, automotive, and high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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