SBLB8L40-E3/81

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	40V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	500mV @ 8A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1mA @ 40V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AB
Operating Temperature - Junction:	-65°C ~ 125°C
Base Part Number:	SBLB8L40

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Introduction

The SBLB8L40-E3/81 is a single, high-performance rectifier diode. It is designed for use in a variety of electronic devices, providing efficient and reliable power conversion. This article will briefly explain the application and working principle of the SBLB8L40-E3/81 rectifier diode.

Application Field

The SBLB8L40-E3/81 rectifier diode is ideal for use in power converters, such as those found in household appliances, automotive electronics, and industrial systems. The device is capable of handling up to 8 A (8 W) of peak reverse voltage with a surge rating of 5 A (5 W) for one hour. Its rugged construction and design make it capable of handling high-voltage transients and corrosive atmospheres. It is also suitable for use in temperature ranges from -55 to +125 °C, making it particularly suitable for use in automotive and industrial applications.

Working Principle

The SBLB8L40-E3/81 rectifier diode works on the principle of rectification. This process involves using an alternating current (AC) voltage, which is then converted into a unidirectional, or DC, voltage. This process is achieved by passing the AC voltage through a diode, which acts as a one-way valve. When the diode is forward-biased (with the positive voltage applied to the anode and the negative voltage applied to the cathode), it allows current to flow through. When the diode is reverse-biased (with the negative voltage applied to the anode and the positive voltage applied to the cathode), it blocks current flow. The SBLB8L40-E3/81 rectifier diode consists of two regions of semiconductor material, a “P” or positive region, and an “N” or negative region. At the interface between the two regions is a depletion region created by the electric field due to the depletion of mobile charge carriers. When a voltage source is connected across the two regions, the electric field increases, further widening the depletion region until it reaches its maximum size. This process is known as the avalanche breakdown and causes the diode to become forward-biased and allows it to conduct current.

Conclusion

In conclusion, the SBLB8L40-E3/81 rectifier diode is a highly reliable and efficient device for power conversion. It is ideal for use in industrial and automotive electronics, as well as in household appliances. The working principle of the device is based on the rectification process, where an alternating current is converted into a unidirectional voltage, governed by the principles of forward and reverse bias.

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