SBR20150CT

Diodes - Rectifiers - Arrays

The SBR20150CT is a dual-channel rectifier array that is employed in numerous applications in both the commercial and industrial market. This device is a monolithic structure which combines the advantages of large conduction capability and fast switching speeds with low forward voltage drops and integrated electrostatic protection.

The Application and Working Principle of the SBR20150CT

The SBR20150CT is employed for a range of applications in the electronics industry, such as power factor correction (PFC) and DC-DC converters, as well as in high frequency power supplies, LED lighting systems and DC motor control. Its unique design allows for a high performance from a relatively compact device with a low power loss, making it desirable for various applications.

The SBR20150CT\'s rectifying property is achieved via its integrated dual MOSFET structure. The device contains two MOSFET transistors, connected in series and arranged opposite to each other to form a dual-channel rectifier array. The first MOSFET acts as the forward current channel, while the second channel blocks the reverse current flow.

The device\'s forward current conduction process occurs when a voltage is applied across anode and cathode terminals. This forward bias causes current to flow through the channel which is realized by an internal channel electric field. The channel can then be controlled by an input voltage.

When the device is reversed biased, the two MOSFETs will form a blocking gate, as the gate-source voltage will facilitate a current flow from the diodes\' anode to the cathode. This thus prevents reverse current flow from being any greater than leakage current.

The device is also equipped with various features including low forward voltage drop, low reverse current leakage and high commutation speeds. The SBR20150CT utilizes a low forward voltage drop due to its two-channel construction, meaning that it requires less voltage than standard rectifiers from a supply. The device\'s low reverse current leakage helps to keep current losses low during its reverse conductivity period and also provides a higher reliability than standard diodes.

In order to meet its high speed requirements, the device operates at 150V/µs, using an optimized electrode structure and vertical layout compared with a traditional device. This helps to decreases the trade-off between switching speed and power dissipation, as well as providing a greater current flow for a shorter transient time.

The SBR20150CT is a valuable asset to engineers working in both the commercial and industrial markets, as it provides a reliable and efficient rectification solution.