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Diodes - Rectifiers - Arrays: SBR20U100CTFP-G Application Field and Working Principle

The SBR20U100CTFP-G (Part Number) is an integrated diode rectifier array specifically designed for use in various applications, with a special emphasis on the computing, medical, automotive and industrial markets. It is perfect for general applications such as high-temperature operations, and high-frequency switching operations. This integrated array of diodes rectifier offers improved power efficiency, cost effectiveness and high-power density.

This diode rectifier array is constructed using vertical chip technology which enables superior power efficiency when compared to conventional rectifier components. It utilizes six (6) discrete N-channel MOSFETs, two (2) Schottky Barrier rectifier chips, and four (4) reverse polarity protected PN Diode cells integrated into a single, high-performance surface-mount package. These components are all designed to operate in frequency switching, high-temperature and high-frequency operations. With these features, the SBR20U100CTFP-G is able to operate in a wide range of applications, providing superior power efficiency and cost efficiency, as well as improved performance in low-profile and high-voltage operations.

The SBR20U100CTFP-G is suitable for applications with a maximum dc operating voltage of 100 volts, and a maximum rms current of 20 amperes. The maximum peak forward surge current of 60 amperes and peak pulse current of 100 amperes further highlight the array’s high power efficiency.

Working Principle of the SBR20U100CTFP-G

The operation mechanism of the SBR20U100CTFP-G is based on the operation of rectifying components. When the array’s input voltage is applied to its input terminals, the diode array is able to produce an output voltage which is switched between the positive and negative polarity mode. The output voltage is subjected to the amount of input voltage applied. The two discrete Schottky Barrier rectifier chips affixed at the side bar of the array perform the job of reverse polarity protection. These diodes terminate the reversed voltage and protect the device from power surge and overload.

The output of the SBR20U100CTFP-G is subjected to six N-channel MOSFETs connected in series. The voltage generated due to these components varies as per the input voltage. In addition, the high-efficiency and high-performance power chip’s profile is reduced to below millimeter, providing overall improved performance while working in highly temperature applications and high-frequency operations.

The SBR20U100CTFP-G is an ideal device for general applications related to computing, automotive, medical and industrial equipment. This array is designed to offer improved efficiency, cost effectiveness, and high power density. It is constructed using low profile components and provides for reverse polarity protection for improved reliability and cost savings compared to standard diode rectifier specimens.

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