SBR2040CTFP Allicdata Electronics
Allicdata Part #:

SBR2040CTFPDI-ND

Manufacturer Part#:

SBR2040CTFP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ARRAY SBR 40V 20A ITO220AB
More Detail: Diode Array 1 Pair Common Cathode Super Barrier 40...
DataSheet: SBR2040CTFP datasheetSBR2040CTFP Datasheet/PDF
Quantity: 70
Stock 70Can Ship Immediately
Specifications
Series: SBR®
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 20A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Description

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Diodes, rectifiers, and arrays are essential components in modern electronic systems. These components can be used to convert currents from alternating to direct, as well as to regulate and control the voltages of different electronic devices. One of the most popular products in this category is the SBR2040CTFP from Alpha and Omega Semiconductor. This component is a rectifier array with an impressive power dissipation of 400 volts, making it suitable for a wide range of applications.This component is designed for reverse biasing applications such as polarity protection and voltage reversal functions. It consists of four individual Schottky Barrier Rectifiers (SBRs) that are connected in anti-parallel configuration. This component has very low forward voltage drops because of its high-speed switching ability, allowing it to achieve higher efficiencies than conventional rectifiers or diodes. Additionally, this component has a low reverse leakage current of less than 1.0 μA which allows it to provide excellent performance in high power applications.The SBR2040CTFP is ideal for use in many different applications, including motor and power supply control, telecommunications, and automotive electronics. Its low forward voltage drop and high-speed switching capability make it perfect for these types of applications. Additionally, its high power dissipation and low reverse leakage current make it suitable for use in a wide range of energy-efficiency applications, including solar photovoltaic, LED lighting, and energy storage systems. Moreover, its low temperature coefficient gives it the ability to perform in extreme temperatures, making it ideal for use in applications that require precise control with regard to temperature.The working principle of the SBR2040CTFP is based on the Schottky Barrier Rectifier (SBR) structure. An SBR is essentially a semiconductor junction between a metal and a semiconductor material. When a voltage is applied to this junction, electrons are repelled from the metal, creating a barrier that reduces the current passing through the junction. This barrier voltage can be adjusted using different materials and doping levels, allowing for precise control of the junction.In the case of the SBR2040CTFP rectifier array, four SBRs are connected in anti-parallel configuration. This allows the component to provide reverse polarity protection and voltage reversal functions, while also allowing it to have high-speed switching ability, low forward voltage drop, and low reverse leakage current.In summary, the SBR2040CTFP from Alpha and Omega Semiconductor is an ideal component for use in high-power and energy-efficiency applications. This component has very low forward voltage drops and high-speed switching ability, making it suitable for a range of applications. Additionally, its low reverse leakage current and high power dissipation make it suitable for applications that require precise temperature control. The working principle of this component is based on the Schottky Barrier Rectifier (SBR) structure, which uses different materials and doping levels to create a barrier that reduces the current passing through the junction.

The specific data is subject to PDF, and the above content is for reference

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