SBR20M45D1-13

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Super Barrier
Voltage - DC Reverse (Vr) (Max):	45V
Current - Average Rectified (Io):	20A
Voltage - Forward (Vf) (Max) @ If:	610mV @ 20A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 45V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Operating Temperature - Junction:	-55°C ~ 175°C

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The SBR20M45D1-13 is a single rectifier diode from NXP. It is suitable for use in a wide range of applications and is typically used in AC/DC rectification with high received power factor. As a diode, it enables current flow in one direction while preventing it from flowing in the opposite direction. Its maximum reverse voltage is 600V and its continuous forward current is 45A.The SBR20M45D1-13 employs a planar structure to reduce stray inductance and lower thermal resistance, allowing it to achieve optimal performance. Its innovative features, such as ultra-low forward voltage drop, make it suitable for applications where power losses must be minimized. Homogeneous current distribution also ensures that high voltage surges are efficiently dissipated.In addition, the SBR20M45D1-13 is a surface mount type of component, meaning it is fast and efficient to install. Its high pulse current and forward recovery time of 10ns, meaning it is suitable for applications in switching power supplies and other regulated switching power circuits.The SBR20M45D1-13 works by utilizing a junction rectifier and a p-type and n-type semiconductor layer. Together, this creates and diode junction that enables voltage and current to flow in one direction and prevents it from flowing in the opposite direction. This junction forms a p-n barrier that can be controlled by the voltage delivered either through an external power source or an external gate applied to the gate terminal.When the anode is positively charged, the electrons at the p-side of the junction are attracted to the positive charge and are pulled across the junction. This increases the number of electrons at the n-side while decreasing the number of electrons at the p-side, creating a gap in the voltage. This is called the forward bias and allows current to flow from the anode to the cathode through the diode. With a reverse bias, the process is reversed and the current does not flow.The SBR20M45D1-13 is an ideal choice for applications where minimal losses and improved performance are key priorities. Its innovative features, such as ultra-low forward voltage drop and homogeneous current distribution, allow users to achieve optimal performance with minimal power loss. It is also a very fast and efficient component to install thanks to its surface mount design, making it suitable for applications in switching power supplies, automotive electronics, and other regulated switching power circuits.

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