
Allicdata Part #: | SBR230LSTRSMC-ND |
Manufacturer Part#: |
SBR230LSTR |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE SCHOTTKY 30V 2A SOD123 |
More Detail: | Diode Schottky 30V 2A Surface Mount SOD-123 |
DataSheet: | ![]() |
Quantity: | 1000 |
30000 +: | $ 0.02612 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 40V |
Capacitance @ Vr, F: | 150pF @ 5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Operating Temperature - Junction: | -55°C ~ 125°C |
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The SBR230LSTR is a single-phase silicon rectifier used in many applications. It is a widely used type of diode for its high power output, low cost, and small size. The SBR230LSTR is commonly used for energy storage, such as in uninterruptible power supplies (UPS), as well as for motor speed control and in other power control applications. It has a working voltage of up to 200V and a power output of up to 30A. As well as being used in circuits and as a rectifier, it can also be used as a temperature sensor and a voltage limiter.
The SBR230LSTR is a silicon rectifier, meaning that it is made up of a P-type semiconductor and an N-type semiconductor. The two types of semiconductor are separated by a thin insulating layer, called the depletion region. When current is applied to the diode, the electrical field applies a force to the electrons, and they start to move towards the P side. This results in a voltage drop across the P layer, and a corresponding voltage drop across the N layer. In this way, the P and N sides are able to conduct current in different directions. This is known as the forward bias of the diode.
The SBR230LSTR also has a reverse bias, which is the opposite of the forward bias. The N-type semiconductor has an electrical field applied to it, so the electrons are repelled from it and move towards the P side. This results in a voltage drop across the P layer, and a corresponding voltage drop across the N layer. This means that the N and P sides conduct current in the same direction, and the diode is said to be in reverse bias. The current that flows in reverse bias is usually small, so the SBR230LSTR is not typically used in reverse bias.
The SBR230LSTR is also able to withstand high operating temperatures. It has a temperature coefficient of only 1%/K, meaning that the voltage drop across the diode will remain constant over a wide temperature range. It also has an extremely low forward voltage, making it ideal for applications where low-loss energy transfer is needed. The SBR230LSTR is also highly efficient, as it has a high current handling capability and low leakage current, making it suitable for many types of power applications.
The SBR230LSTR has a variety of applications and is used in many different industries. It is commonly used in motor speed control, uninterruptible power supplies, power control circuits, and temperature sensors. It can also be used in applications such as low-loss energy transfer, voltage limiting, and voltage regulation. The SBR230LSTR is a highly reliable and cost-effective solution for many different applications, making it a popular choice.
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SBR20U40CT-G | Diodes Incor... | -- | 53 | DIODE ARRAY SBR 40V 10A T... |
SBR2040CTFP | Diodes Incor... | -- | 70 | DIODE ARRAY SBR 40V 20A I... |
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