Allicdata Part #: | SD1330-05H-ND |
Manufacturer Part#: |
SD1330-05H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | SD1330-05H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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SD1330-05H Application Field and Working Principle
SD1330-05H is a high-performance bipolar junction transistor (BJT), designed and manufactured by Sumitomo Electric Industries, Ltd. It is typically used in radio frequency (RF) applications. This transistor features excellent stability and high sensitivity to RF signals, making it well-suited for applications such as wireless communication, automotive electronics, broadcasting, instrumentation, and other industrial applications.
Application Field
The SD1330-05H is a high-performance bipolar junction transistor (BJT) designed and manufactured by Sumitomo Electric Industries, Ltd. It is typically used in radio frequency (RF) applications. Common applications include wireless communication, automotive electronics, broadcasting, instrumentation, and other industrial applications. The device features excellent stability and high sensitivity to RF signals, making it ideal for use in critical applications.
The SD1330-05H is well-suited for use in RF amplifiers, as its low-noise figure, wideband response, and high gain enable it to accurately convey small-signal inputs. The device can also be used for linear amplification with its exceptionally low distortion levels. Additionally, the device features high linearity, making it well-suited for applications where low distortion is required, such as receivers and mixers.
Working Principle
The SD1330-05H is a high-performance bipolar junction transistor (BJT) designed and manufactured by Sumitomo Electric Industries, Ltd. The device works by flowing a current through a base-collector junction, known as the emitter junction. This causes a voltage difference between the base and collector terminals, which in turn creates a small current that flows through the base-emitter junction and into the collector terminal.
This current flow results in a proportional emitter current, which increases in magnitude depending on the amount of current passing through the base-collector junction. By controlling the base-collector current, the magnitude of the emitter current can be precisely controlled. This allows the device to be used for precise amplification and linearity. Additionally, by varying the collector current, the device can also be used for frequency selection and gain control.
Conclusion
The SD1330-05H is a high-performance bipolar junction transistor (BJT) designed and manufactured by Sumitomo Electric Industries, Ltd. It is well-suited for use in a variety of radio frequency (RF) applications, thanks to its excellent stability and high sensitivity to RF signals. Common applications include wireless communication, automotive electronics, broadcasting, instrumentation, and other industrial applications. Additionally, the device features low noise figure, wideband response, and high gain, which make it ideal for use in RF amplifiers, as well as for linear amplification and frequency selection.
The specific data is subject to PDF, and the above content is for reference
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