SD138-11-31-211 Allicdata Electronics
Allicdata Part #:

SD138-11-31-211-ND

Manufacturer Part#:

SD138-11-31-211

Price: $ 101.18
Product Category:

Sensors, Transducers

Manufacturer: Luna Optoelectronics
Short Description: PHOTODIODE 1100NM 3.5MM/3.1MM
More Detail: Photodiode 950nm
DataSheet: SD138-11-31-211 datasheetSD138-11-31-211 Datasheet/PDF
Quantity: 1000
500 +: $ 91.98280
Stock 1000Can Ship Immediately
$ 101.18
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Wavelength: 950nm
Color - Enhanced: --
Spectral Range: 300nm ~ 1100nm, 950nm ~ 1100nm
Diode Type: PIN
Responsivity @ nm: 0.6 A/W @ 950nm
Response Time: --
Voltage - DC Reverse (Vr) (Max): 25V
Current - Dark (Typ): --
Active Area: 9.62mm², 7.55mm²
Viewing Angle: --
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: --
Description

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Optical Sensors, which detect or measure light, are essential for automation and robotic industries for their automation processes. Photodiodes are one of the most common type of optical sensors used for measuring the intensity of light and various other purposes.

SD138-11-31-211 is an ultra-sensitive Si-PIN 1550nm Negative Output Photodiode. It is designed for general purpose optical signal detection such as for spectro-photometric studies or medical diagnostic equipment. With a wide range dynamic response, high sensitivity, low dark current, and high operating temperature, SD138-11-31-211 photodiode is an ideal device for various applications.

The main application fields of SD138-11-31-211 photodiode include optical communication systems, optical detection systems, optical sensing systems, fiber optic systems, spectroscopy, medical diagnostic equipment, and so on. It is used for capturing and detecting waveforms, detecting electromagnetic radiation, measuring light levels, and analyzing optical spectra. Furthermore, it is an ideal device for detecting laser beams for applications such as alignment, ranging, and positioning.

The working principle of SD138-11-31-211 photodiode is based on the photovoltaic effect. It uses electron-hole pairs that are generated due to the high energy of the incident light or electromagnetic radiation. When the incident light photons strike the p-n junction, they react with the valence electrons of a semiconductor material, resulting in the generation of electron-hole pairs at the atomic level. These electron-hole pairs cause a leakage current between the junctions, which is proportional to the intensity of the incident light. Thus, the output current can be used to obtain the intensity of the incident light.

SD138-11-31-211 photodiode features a wide dynamic response range, from below ambient light levels up to 100mW/cm2 and high sensitivity, which enable it detect even the weak signals in a noisy environment. It is operable at a wide range of temperatures, up to 110°C and also feature a low dark current. All these features make SD138-11-31-211 an ideal device for various applications.

The specific data is subject to PDF, and the above content is for reference

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