Allicdata Part #: | SD1372-06H-ND |
Manufacturer Part#: |
SD1372-06H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor |
DataSheet: | SD1372-06H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
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The SD1372-06H is a high-power item in the NPN Series of transistors. It is classified as a high frequency, bipolar junction transistor (BJT). The device has an operating range of 10MHz to 250MHz. It is used in a variety of applications, including radio frequency (RF) power amplifier circuits, data acquisition systems, mixers, commercial and consumer transmitters, and commercial test equipment.
The SD1372-06H features a complementary symmetrical structure with a gain bandwidth product of about 5000MHz and a power dissipation of up to 2.5W. It has a temperature range of -55℃ to +175℃ and exhibits exceptional stability over a wide range of operating conditions. The DC current gain is typically between 30 and 80.
The SD1372-06H has a maximum collector-emitter voltage (Vce) of 65V, an emitter-base voltage (Veb) of +5volts, and a collector-base voltage (Vcb) of 65volts. In addition, the collector-emitter saturation voltage (Vce(sat)) is typically less than 3V. It also has a collector-emitter cutoff current (Ices) of typically less than 1μA and a collector-base cutoff current (Icbo) of typically less than 1μA.
The SD1372-06H works on a few simple principles. To start, it is an NPN transistor and has an associated type designation. This type designation tells the user about certain characteristics of the transistor. It is then powered by an electrical current, which is either supplied directly or indirectly from a power source. This is typically a voltage source from a battery or other source of DC, or from an AC voltage source.
Once powered, the principal of operation is based on the three terminals: Collector, Base, and Emitter. The electrons flow from the Emitter to the Base and then onward to the Collector. The Base is the controlling terminal and alters the amount of current that can flow through the Collector-Emitter circuit. Increasing the current passing through the Base increases the current flowing through the Collector. This operation is known as amplification. The SD1372-06H is capable of performing this function with high precision, reliability and power parameters.
The SD1372-06H is specifically designed for RF amplifiers where high gain is required. This makes it an ideal choice for a range of various applications. Some of the most common applications for this transistor include mobile and fixed radio communication systems, active antenna amplifiers, and power amplifiers for broadband applications.
The SD1372-06H is ideal for a number of projects and designs as it offers high frequency capability and reliable performance. It is one of the most popular RF transistors, and it is a go-to choice for many professionals. The device is also available in a variety of packages, including a TO-220 and a surface mount package.
The specific data is subject to PDF, and the above content is for reference
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