Allicdata Part #: | SD1332-05C-ND |
Manufacturer Part#: |
SD1332-05C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF POWER TRANSISTOR |
More Detail: | RF Transistor NPN 15V 30A 5.5GHz 180W Surface Moun... |
DataSheet: | SD1332-05C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5.5GHz |
Noise Figure (dB Typ @ f): | 2.5dB @ 1GHz |
Gain: | 17dB |
Power - Max: | 180W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 14mA, 10V |
Current - Collector (Ic) (Max): | 30A |
Operating Temperature: | 200°C |
Mounting Type: | Surface Mount |
Package / Case: | M150 |
Supplier Device Package: | M150 |
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The SD1332-05C is a type of transistor device specifically designed for radio frequency (RF) applications. Transistors are a type of electronic component used in a variety of electronic circuits, and the SD1332-05C is a particular type of transistor known as a bipolar junction transistor (BJT). This type of common active component is commonly used for amplifying electrical signals, thanks to its unique working principle, and is particularly suited for use in RF applications.
A BJT, whether it is an NPN or PNP type, is comprised of three main regions known as the emitter, base, and collector. Current can flow in either direction through the base-emitter junction and, depending on the type of transistor, create an active region. This active region allows or disallows the current flow between collector and emitter, thus controlling the output, and is the fundamental principle on which BJTs act as switches. The SD1332-05C is an example of a NPN type BJT, meaning current needs to be applied to the base to turn it on, thus creating the active region.
The SD1332-05C is a low noise general device, meaning it has lower noise levels than regular BJTs, making it ideal for RF applications. This low noise characteristic of the SD1332-05C means it can amplify small signals without introducing too much background noise or distortion, while still offering good power and gain. Other characteristics that are useful in RF applications include low capacitance between the collector and emitter of the device, meaning it can work at higher frequencies with fewer issues. Additionally, it has a relatively low input resistance, meaning it can accept a higher voltage with fewer issues.
In terms of its application field, the SD1332-05C is primarily used for a variety of RF applications, such as high frequency amplifiers, oscillators, and mixers. It is particularly commonly used in FM transmitters and UHF/VHF receivers, thanks to its capability to handle the wide bandwidths and low noise characteristics required in these applications. The device can also be used in more high-power amplifiers due to its relatively high power handling capability, up to a maximum of 200V. It is also common in more simple applications such as electric fence circuits and low-powered amplifiers, where its size and low noise characteristics make it an ideal choice.
Overall, the SD1332-05C is an excellent example of a low-noise BJT, specifically designed for RF applications. Its wide-ranging applications and reliable characteristics make it an ideal choice for any type of RF system, particularly those applications requiring low noise and high-frequency operation. It is a popular choice in many different areas, due to its low capacitance, high power handling capability, and excellent noise performance. The SD1332-05C is a reliable device that can easily be utilized in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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