Allicdata Part #: | 497-10701-ND |
Manufacturer Part#: |
SD4931 |
Price: | $ 52.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANSISTOR RF MOSFET N-CH M174 |
More Detail: | RF Mosfet N-Channel 50V 250mA 175MHz 14.8dB 150W M... |
DataSheet: | SD4931 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 47.29720 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 175MHz |
Gain: | 14.8dB |
Voltage - Test: | 50V |
Current Rating: | 20A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 150W |
Voltage - Rated: | 200V |
Package / Case: | M174 |
Supplier Device Package: | M174 |
Description
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SD4931 is an advanced, Double Diffused Metal Oxide Semiconductor Field Effect Transistor (RF-DMOS). It is used in a variety of applications, including RF amplifiers and switching applications.SD4931 is a high power, wide band MOSFET transistor. It offers a breakdown voltage of 3.2V and a continuous current capability of 100A. The drain-source breakdown voltage of this RF-DMOS is rated at 4V. This makes the SD4931 an extremely useful device for applications requiring a wide range supply voltage.In terms of its working principle, SD4931 utilizes the depletion mode in which the basic operation is similar to a normal junction field-effect transistor (JFET). The device operates in the depletion mode, where the gate-source voltage is made increasingly more negative until the channel between the source and drain is "pinched" off.The low drain-source saturation voltage of SD4931 makes it more efficient in applications like switching and RF amplifiers. It also exhibits a low gate threshold voltage and a low drain-source RDS when compared to other MOSFETs. This ensures that the device can be operated at higher frequencies, up to 2.2GHz, and also reduces power consumption.The high frequency operation is possible due to the low output capacitance of the device. The SD4931 has an integrated gate-drain parasitic capacitance of about 4.55 pF, which leads to a reduced gate-source capacitance. This further reduces the output capacitance of the device and thereby increases the operating frequency. Low gate input resistance combined with low input capacitance allow for a wide frequency range.SD4931 also has a wide transconductor impedance range from 294Ω to 1500Ω. This makes it suitable for applications like high power switches, which require good linearity. This also helps to provide good efficiency and low distortion when used in high frequency applications like RF amplifiers.Finally, the SD4931 features a robust package, with a high temperature tolerence, which allows it to operate reliably in extreme temperatures. This makes this RF-DMOS the preferred choice for use in military and aerospace applications. In conclusion, the SD4931 is an ideal device for a variety of RF and switching applications. Its features such as a high breakdown voltage, low gate threshold voltage, wide transconductor impedance range, and wide frequency range, as well as its robust package, all make it an excellent choice for these applications.The specific data is subject to PDF, and the above content is for reference
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