SD56150 Allicdata Electronics
Allicdata Part #:

SD56150-ND

Manufacturer Part#:

SD56150

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 65V 860MHZ M252
More Detail: RF Mosfet LDMOS 32V 500mA 860MHz 16.5dB 150W M252
DataSheet: SD56150 datasheetSD56150 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 860MHz
Gain: 16.5dB
Voltage - Test: 32V
Current Rating: 17A
Noise Figure: --
Current - Test: 500mA
Power - Output: 150W
Voltage - Rated: 65V
Package / Case: M252
Supplier Device Package: M252
Description

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The SD56150 is a field-effect transistor (FET) specifically designed for radio frequency (RF) applications. It is a Junction Field Effect Transistor (JFET), which is a type of FET with very low input capacitance and high input impedance. This makes it suitable for use in high frequency circuits, such as those used in radio systems and signal processing. Its low input capacitance means that it can reduce signal distortion caused by signal reflections and gain. The SD56150 is also used as a building block in signal conditioning circuits for voltage or current control.

The SD56150 is an enhancement-mode FET, meaning that the current flow through the device is controlled by the magnitude of the gate-source voltage (Vgs). An increase in the gate-source voltage will cause an increase in the drain-source current (Ids). A decrease in the gate-source voltage will cause a decrease in the drain-source current. The amount of current flow is proportional to the magnitude of the voltage difference between the gate and source. This makes the SD56150 an ideal voltage-controlled amplifier or switch.

The SD56150 has several key features that make it suitable for high-frequency radio applications. It has an exceptionally low input capacitance of 50pf, which helps to reduce signal distortion. It also has a maximum frequency of operation up to 3GHz and a maximum drain-source breakdown voltage (Vdss) of 60V. The low input capacitance and high breakdown voltage mean that it can be used in high frequency, high-power applications with minimal signal distortion.

The SD56150 also has a low on-state drain-source resistance (Rds-on) of 0.2ohms. This means that the device can provide high current flow with minimal power loss. This makes the device ideal for powering up high-current devices such as RF amplifiers or switches. The device also has a low gate-source capacitance (Cgs) of 5pf, making it well suited for use in high frequency applications.

The SD56150 has a wide range of application fields. It is commonly used as a voltage-controlled switch in radio frequency applications such as antennas, amplifiers and signal processing. It is also used as a current-controlled switch in circuits such as RF power amplifiers and transceivers. The device can also be used in signal conditioning circuits, such as those used in digital signal processors, frequency synthesizers and cellular phones.

In summary, the SD56150 is a JFET that has been specifically designed for use in high frequency applications. It has an exceptionally low input capacitance and a high maximum operating frequency of 3GHz. The device also has a low Rds-on and a high breakdown voltage, making it suitable for powering high current devices such as RF amplifiers and switches. The SD56150 is a versatile and highly useful device, with application fields in both radio frequency and signal conditioning circuits.

The specific data is subject to PDF, and the above content is for reference

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