SD57060-01 Allicdata Electronics
Allicdata Part #:

497-5480-ND

Manufacturer Part#:

SD57060-01

Price: $ 55.59
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 65V 945MHZ M250
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 15dB 60W M250
DataSheet: SD57060-01 datasheetSD57060-01 Datasheet/PDF
Quantity: 56
1 +: $ 50.53230
10 +: $ 47.92600
100 +: $ 43.36130
Stock 56Can Ship Immediately
$ 55.59
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: 7A
Noise Figure: --
Current - Test: 100mA
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: M250
Supplier Device Package: M250
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SD57060-01 is a wideband low noise amplifier that utilizes the MOSFET field-effect transistor (FET) technology. The amplifier has a power gain of up to 30dB and a wide frequency range of 0.3-3 GH.

The working principle of SD57060-01 involves a balanced current path that operates from the dual supply input. The input impedance of the device is lows, allowing for it to be used in a variety of systems. The common source configuration uses two cascode connected MOSFETs for stability and as an input amplifier. A cascode connection reduces the Miller effect which leads to improved linearity, reduced distortion, and improved gain.

The RF amplifier also features a wide range linear control voltage, which is output by the bias circuit and application circuit. By changing the voltage, the current passing through the MOSFET transistors is regulated, providing the user with full control of the device’s gain. It also features high linearity, high power efficiency, and a low output noise voltage. The SD57060-01 has a maximum output power of +25 dBm and a noise figure of 1.5 dB.

The SD57060-01 is used in a variety of applications that require high gain and a high frequency range. It is used in receivers, antennas, cell phones, wireless modems and communications systems, satellite communications, and military applications. The device is ideal for applications that need to operate over a wide bandwidth and provide a low noise figure.

The SD57060-01 has been designed with a number of features that improve efficiency and make it suitable for a variety of applications. This includes low power consumption and a high level of isolation between the input and the output. The device is also designed for easy integration in to existing systems, as it utilizes both single-ended and push-pull configurations for a variety of inputs and outputs.

The SD57060-01 operates by using two cascode connected transistor stages. The common source amplifier section is used for power gain and provides a low input impedance. The microprocessor controlled bias circuit is used to provide a wide range linear control voltage, which is used to adjust the gain of the amplifier. The control voltage is coupled to the gate of the MOSFETs, allowing for them to be regulated for gain.

The device is able to effectively provide a high power gain over a wide frequency range. It also offers a low distortion level, a low output noise voltage, and a low power consumption. The SD57060-01 is able to offer exceptional performance earcons with a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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