Allicdata Part #: | SDT10A100CTDI-ND |
Manufacturer Part#: |
SDT10A100CT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 100V 5A TO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 100V 5A... |
DataSheet: | SDT10A100CT Datasheet/PDF |
Quantity: | 196 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 660mV @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50µA @ 100V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Description
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。Diodes - Rectifiers - Arrays - SDT10A100CT application field and working principle
A switching diode, or rectifier, is a two-terminal devices that acts as an electrical control valve. They can convert AC signals to DC signals, or to convert DC signals of one polarities to signals of the opposite polarities. Switching diodes are among the most commonly used electronic components, and are used in all kinds of applications, from basic power supply to signal amplification.SDT10A100CT is a switching diode array for high-speed switching applications. It can operate at frequencies up to 5MHz and features low forward voltage drop and low reverse current leakage. This diode array is ideal for high speed switching applications, such as power supply front ends, audio amplifiers, and motor control applications.The operating principle of the SDT10A100CT switching diode array is based on the basic principle of p-n junction diodes. P-n junction diodes are two-terminal devices consisting of a p-type semiconductor with an n-type semiconductor layer on one side, and a p-type semiconductor layer on the other side. When a voltage is applied across the p-n junction, the difference in charge between the p-type and n-type materials creates an electric field which causes current to flow between the two terminals.The working principle of the SDT10A100CT is based on this transverse electrical field. The device contains two silicon diodes connected in parallel, and when a voltage is applied to the anode of one diode and the cathode of the other, current can flow between the two terminals. This process is referred to as forward biasing. When the voltage is reversed, the current is blocked by the diode, and this process is referred to as reverse biasing.The SDT10A100CT diode array is ideal for high-speed switching applications, as it can provide a fast switching speed with low forward voltage drop and low reverse current leakage. Due to its robust construction and compact size, it can be used in a wide range of applications, from power supplies to motor controls.In conclusion, the SDT10A100CT is a versatile, high-speed switching diode array designed for a variety of applications, including power supply front ends, audio amplifiers, and motor controls. It is based on the basic principle of p-n junction diodes, and when a voltage is applied across the p-n junction, current can flow between the two terminals. The SDT10A100CT can provide a fast switching speed with low forward voltage drop and low reverse current leakage, making it an ideal choice for high-speed switching applications.The specific data is subject to PDF, and the above content is for reference
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