Allicdata Part #: | SDT12S60IN-ND |
Manufacturer Part#: |
SDT12S60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 600V 12A TO220-2 |
More Detail: | Diode Silicon Carbide Schottky 600V 12A (DC) Throu... |
DataSheet: | SDT12S60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolSiC™ |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 12A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 12A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 400µA @ 600V |
Capacitance @ Vr, F: | 450pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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SDT12S60 is a type of diode rectifier which is mainly used in power control. It is a single diode rectifier ideal for large medium or small power applications. The characteristics of the SDT12S60 make it ideal for daily life applications in high-voltage and high-current applications.
The SDT12S60 is a single diode rectifier which contains respective properties of p-type silicon material which depicts well the properties of one-way conduction. It has a built-in temperature protection which helps in temperature regulation required for working under higher operating temperatures. It is built with pressure welding techniques to ensure high reliability and long-term performance.
The applications of the SDT12S60 mainly include power supplies, dynamic braking and soft start power factor correction circuits, AC to DC conversion and other high-current applications. This type of diode rectifier is mainly used in power semiconductor devices where current control is a must to ensure safe operation of the equipment.
The typical working principle of the SDT12S60 is based on the movement of electrons through a vacuum or gas into a p-type silicon material. As the current passes through the p-type material, the electrons that make up the current temporarily change their speed and direction. This is due to the fact that the electrons are attracted by the positively charged material. The electrons then move in a straight line and become positively charged when they reach the opposite side of the material.
The SDT12S60 is also known as a three-terminal medium-power diode rectifier. It has a forward voltage drop of 1.05 V when the current is flowing in the reverse direction. This is a very useful feature for medium and large power applications. When the current is flowing in the forward direction the voltage drop is 1.2 V. This voltage drop is relatively high compared to other rectifier diodes.
The SDT12S60 also has a built-in temperature protection which helps in preventing the diode from overheating when running at higher operating temperatures. It also has a built-in pressure welding technique which ensures high reliability and long-term performance.
In conclusion, the SDT12S60 is a type of diode rectifier mainly used in power control applications. It has a forward voltage drop of 1.05 V when the current is flowing in the reverse direction and 1.2 V when the current is flowing in the forward direction. Its built-in temperature protection helps in preventing the diode from overheating when running at higher operating temperatures. It is also built with a pressure welding technique to ensure high reliability and long-term performance.
The specific data is subject to PDF, and the above content is for reference
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