SE20DB-M3/I Allicdata Electronics

SE20DB-M3/I Discrete Semiconductor Products

Allicdata Part #:

SE20DB-M3/IGITR-ND

Manufacturer Part#:

SE20DB-M3/I

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 3.9A TO263AC
More Detail: Diode Standard 200V 3.9A Surface Mount TO-263AC (S...
DataSheet: SE20DB-M3/I datasheetSE20DB-M3/I Datasheet/PDF
Quantity: 1000
2000 +: $ 0.32877
6000 +: $ 0.31311
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: Automotive, AEC-Q101, eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3.9A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 25µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The SE20DB-M3/I is a type of single rectifier diode that is widely used for a variety of applications. It is designed for low-current operation, with a low voltage drop (< 0.5V) and high switching speeds (up to 10A peak current levels).

The SE20DB-M3/I is typically used in AC/DC power conversion, DC/DC voltage regulation, and in DC power supply applications. It is also used in automotive and medical applications, as well as LED lighting and audio circuitry. It has a low forward voltage drop and excellent switching characteristics.

The SE20DB-M3/I has an alternative package option called the SE20DB-M2/I. This alternative package provides a smaller overall package size and can operate at higher frequencies. It also features improved surge immunity.

The SE20DB-M3/I has a high reverse isolation voltage, meaning it can withstand high voltages without leakage. It also has a high power dissipation capability, meaning it can handle more power than other similar diodes. The device features a low forward voltage drop, which helps reduce power losses. In addition, the SE20DB-M3/I has a low thermal resistance, which aids in thermal management.

The SE20DB-M3/I can be operated in both positive and negative polarities. It also has a symmetric rectification characteristic, making it suitable for use in applications that require symmetrical input/output signals. Additionally, the SE20DB-M3/I has a junction capacity of 2.2 mA, making it suitable for rectifying signals with low-amplitude and high-frequency components.

The working principle of the SE20DB-M3/I is based on the application of a semiconductor diode. When the diode is reverse-biased, current cannot flow through it. When forward-biased, the diode allows current to flow through it. The diode will then rectify the AC current, turning it into a DC current. The resulting low-voltage DC current can be used for powering downstream circuitry.

The SE20DB-M3/I can be used in a variety of applications, primarily those that require DC power or AC/DC power conversion. It is useful for low-current applications as it has a high switching speed and a low voltage drop. Its symmetric rectification characteristics and low thermal resistance make it suitable for use in various high-frequency applications. Furthermore, its wide range of operating temperatures makes it suitable for use in many environments.

The specific data is subject to PDF, and the above content is for reference

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