Allicdata Part #: | SE20DD-M3/IGITR-ND |
Manufacturer Part#: |
SE20DD-M3/I |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3.9A TO263AC |
More Detail: | Diode Standard 200V 3.9A Surface Mount TO-263AC (S... |
DataSheet: | SE20DD-M3/I Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.32877 |
6000 +: | $ 0.31311 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3.9A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 20A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 25µA @ 200V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Supplier Device Package: | TO-263AC (SMPD) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are electronic devices that act as rectifiers to control the flow of electric current from a power source to a load. A single diode, such as the SE20DD-M3/I, is a semiconductor device with two power connections and one controlling terminal. It has a built-in rectifier that has the ability to allow only one direction of electric current. This allows it to convert alternating current (AC) to direct current (DC).
The SE20DD-M3/I diode is a fast-acting, high-efficiency rectifier that is ideal for applications that require a sharp peak-load such as lighting circuits. It is widely used in various areas including automotive, industrial, and consumer electronics. The SE20DD-M3/I is also suitable for applications that require small and light weight components.
The SE20DD-M3/I diode features unidirectional electrical current, temperature stability of up to 125 degrees Celsius, and a low forward voltage drop. Its characteristics allow it to be used in applications that are sensitive to temperature changes, such as thermally-sensitive devices. It is also suitable for peak power applications as it can operate up to 200 kHz.
The working principle of the SE20DD-M3/I diode is based on the PN junction and the flow of minority carriers. A PN junction is an interface between a positively-doped and a negatively-doped semiconductor material, which forms a diode. The PN junction is formed by the diffusion of minority carriers, which are electrons and holes depending on the doping type. The diode then allows electric current to flow in one direction when biased. In the case of the SE20DD-M3/I, negative electrons will diffuse through the junction and flow from the n-type to the p-type.
When a positive bias is applied to the SE20DD-M3/I diode, the electric field will push the electrons, creating a forward voltage drop. The current then passes through the diode and is rectified, allowing only one direction of the electric current to flow. This is the basic working principle of the SE20DD-M3/I diode. It is important to note that the performance of the diode is affected by the temperature, as the forward voltage drop increases as the temperature increases.
In conclusion, the SE20DD-M3/I diode is a high-efficiency rectifier which is used in various applications such as automotive, industrial, and consumer electronics. It uses its unidirectional electrical current, temperature stability, and low forward voltage drop characteristics to provide a reliable and durable performance. The working principle of the SE20DD-M3/I diode is based on the PN junction and the flow of minority carriers, which allows it to convert alternating current (AC) to direct current (DC).
The specific data is subject to PDF, and the above content is for reference
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