
Allicdata Part #: | SE40PBHM3_A/I-ND |
Manufacturer Part#: |
SE40PBHM3_A/I |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2.4A TO277A |
More Detail: | Diode Standard 100V 2.4A Surface Mount TO-277A (SM... |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.14244 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2.4A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.2µs |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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SE40PBHM3_A/I is a high-current single-phase silicon rectifier used for power rectification in applications that require high forward surge current capability. This device is suitable for use in AC adapters, switched mode power supplies, power supplies for consumer electronics, high-current rectification for LEDs and other lighting, battery chargers, and motor control.
The SE40PBHM3_A/I is a fast recovery rectifier with a forward current capability of 40 Amps. It has a maximum forward voltage drop of 1.15V and a reverse leakage current of typ. 0.01µA. It has a high-temperature silicone coated package, which is suitable for up to 125°C. The device has an operating temperature range between -55°C and 125°C and is therefore suitable for a wide range of applications.
The SE40PBHM3_A/I consists of two Silicon diodes connected in parallel. The two diodes are connected so that the anode of one diode is connected to the anode of the other, the cathode of one is connected to the cathode of the other, and the two diodes are connected in anti-parallel. This configuration provides twice the current handling capability of a single diode.
When an AC voltage applied to the device, it acts as a rectifier allowing current to flow through the device only during the positive half of the waveform. During this time, current flows from the anode of one diode to the cathode of the other diode, and is then rectified to a DC voltage via the device’s junction capacitance. When the waveform changes and the voltage reaches a negative value, the reverse voltage is blocked, and current stops flowing through the device.
The SE40PBHM3_A/I is a great choice for applications that require high current capability and low forward voltage drop. It has a wide operating temperature range and low reverse leakage current, making it suitable for many types of power rectification applications. It is also available in both a TO-220 and a TO-263 package.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SE40PJ-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PG-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PGHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PB-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PGHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PDHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PDHM3/86A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PGHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PGHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PD-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PD-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PDHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PBHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PBHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PDHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJ-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PG-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PJHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PJHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PBHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PB-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PBHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
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