
Allicdata Part #: | SE40PGHM3_A/H-ND |
Manufacturer Part#: |
SE40PGHM3_A/H |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 2.4A TO277A |
More Detail: | Diode Standard 200V 2.4A Surface Mount TO-277A (SM... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.14244 |
Specifications
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2.4A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.2µs |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Description
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SE40PGHM3_A/H is a high-reliability, medium voltage, high current silicon rectifier. It has a variety of applications in industrial and electronics. This article will discuss the application field and working principle of the SE40PGHM3_A/H.The SE40PGHM3_A/H is an efficient, high-current rectifier suitable for a broad range of applications in the industrial and electronics fields. It offers high unidirectional current up to 40 Amps, and it can be used in switching, power supply, UPS system, free wheeling diode, surge suppression, motor control and other power circuit applications. It features a proven silicon epitaxial structure for superior current-handling capability, and it can operate at high temperatures up to 175°C.The SE40PGHM3_A/H is designed to protect against reverse voltage and current and reduce losses from reverse currents. It also eliminates circuit noise arising from leakage current. The SE40PGHM3_A/H features a glass passivated junction and hermetic sealing to ensure reliable operation in industrial and electronics fields. The SE40PGHM3_A/H is a PN junction diode that works on the principle of the depletion of minority carriers inside the diode due to the applied reverse voltage. As the voltage increases, the depletion region starts getting wider and wider, thus reducing the current through it. This is known as the \'reverse bias operation\'.When the voltage across the diode is positive, the conduction band is shifted closer to the top of the energy \'valley\'. The holes present in the p-type region can now move easily to the n-type layer, which results in a flow of current. This is known as \'forward bias operation\'. The SE40PGHM3_A/H can take huge amounts of forward current due to its high current-handling capability. In conclusion, the SE40PGHM3_A/H is an efficient, high-current rectifier designed for use in industrial and electronics fields for current control, surge protection and motor control applications. Its proven silicon epitaxial structure and proven high temperature operation make it an ideal choice for these applications. It is also designed to protect against reverse voltage and current, reducing losses from reverse currents. The SE40PGHM3_A/H operates on the principle of the depletion of minority carriers within the device due to the applied reverse voltage, and it can take large amounts of forward current due to its high current-handling capability.
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