
Allicdata Part #: | SE40PJ-M3/87A-ND |
Manufacturer Part#: |
SE40PJ-M3/87A |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 2.4A TO277A |
More Detail: | Diode Standard 600V 2.4A (DC) Surface Mount TO-277... |
DataSheet: | ![]() |
Quantity: | 1000 |
6500 +: | $ 0.12949 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 2.4A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 4A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.2µs |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The SE40PJ-M3/87A is a high-speed, planar passivated, NPN switching transistor optimized for digital switching and high-speed saturation applications. It has a built-in avalanche energy absorber and a maximum collector-base breakdown voltage of 40V. This device is manufactured using the latest chip technology and is a versatile, high speed transistor for a variety of applications. It is ideal for use in medical, consumer, communications, and industrial applications.
The SE40PJ-M3/87A can be categorized in Diodes - Rectifiers - Single. This device has a variety of applications including switching, voltage regulation, motor control and driver applications. It can be used in dc-to-dc converters, general-purpose inverters, and rectifying diodes. In addition, it can be used as an output device in power supplies, inverters and motor toggle switches.
The working principle of the SE40PJ-M3/87A is relatively simple. It is a bipolar junction transistor (BJT) which consists of two separate P-N junctions. This design allows it to be in either an "on" or "off" state. In its "on" state, current can flow from the collector to the emitter, so the transistor is saturated. In its "off" state, current is blocked, so the transistor is cut off. This is the basic functioning principle of the SE40PJ-M3/87A.
The SE40PJ-M3/87A is also designed with an integrated avalanche energy absorber. This feature helps reduce the risk of device destruction due to voltage over-stress. The avalanche energy absorber ensures that the device will survive even in the event of an over-stressed load or the application of an excessive voltage. This feature makes the SE40PJ-M3/87A an ideal choice for applications that require a reliable and resilient solution.
The SE40PJ-M3/87A is capable of switching at very high speeds, even when operating in a variety of temperature ranges. In addition, its power efficiency is excellent, allowing for precise and consistent results. This device is also designed to operate with minimal noise and high reliability, making it a great choice for applications that require longevity and reliability. Additionally, its wide range of voltage and current ratings make it an ideal choice for applications in various sectors.
Overall, the SE40PJ-M3/87A is an excellent and highly versatile device that can be used in a variety of applications. This device is capable of operating at very high speeds with excellent power efficiency, minimal noise, and high levels of reliability. Additionally, its integrated avalanche energy absorber provides protection against voltage over-stress, making it a great choice for those applications that require resilient and reliable solutions. Its wide range of voltage and current ratings make it suitable for a variety of uses, making it an ideal choice for a variety of applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
SE40PJ-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PG-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PGHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PB-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PGHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PDHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PDHM3/86A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PGHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PGHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PD-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PD-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PDHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PBHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PBHM3_A/H | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PDHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 2.4A ... |
SE40PJ-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PG-M3/86A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 2.4A ... |
SE40PJHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PJHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.4A ... |
SE40PBHM3_A/I | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PB-M3/87A | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
SE40PBHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.4A ... |
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