SE70PB-M3/86A Allicdata Electronics
Allicdata Part #:

SE70PB-M3/86A-ND

Manufacturer Part#:

SE70PB-M3/86A

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 2.9A TO277A
More Detail: Diode Standard 100V 2.9A (DC) Surface Mount TO-277...
DataSheet: SE70PB-M3/86A datasheetSE70PB-M3/86A Datasheet/PDF
Quantity: 1000
6000 +: $ 0.20495
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2.9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.6µs
Current - Reverse Leakage @ Vr: 20µA @ 100V
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The SE70PB-M3/86A diode is a High Voltage and High Power Rectifier component from Avago Technologies that is part of their Schottky Series. This component acts as an electronic component that allows the rectification of direct current (DC). It has a peak forward current of 70 amperes, reverse voltage of 800 volts, and peak forward voltage of 1.3 volts with a high operating temperature up to 150 °C.

The SE70PB-M3/86A is a single component, meaning that it is comprised of one component in the rectification circuit. It is also known as a Schottky Barrier rectifier, because of its design which uses a reverse bias voltage to keep it in a low conduction state. The rectifier also employs a depletion layer, which acts as a barrier to pass current from anode to cathode. This depletion layer is created by an applied reverse bias voltage.

The SE70PB-M3/86A has a wide range of applications, with most of its applications being related to the conversion of AC to DC power. It can be used in AC/DC and DC/DC power supplies, helping to reduce power consumption, as well as in rectifier and DC voltage regulators, providing power to other electrical components. Additionally, it can be used in TV tuners and digital circuits, providing a stably regulated power source. It can also be used in lighting applications, where its high reverse voltage of 800 volts gives it the ability to rectify extremely high voltages. The high peak forward current of 70 amperes and high peak forward voltage of 1.3 volts also make it useful for a number of industrial applications.

The working principle behind the SE70PB-M3/86A is that when the proper reverse bias voltage is applied, the depletion layer allows an anode potential to pass through. This causes a current to flow from anode to cathode, known as forward bias. As the current increases, the forward voltage drop is reduced, and a voltage across the junction is maintained as long as the current is within its rated limit. The peak forward current of the diode can allow for a higher power rating, enabling higher power applications.

When compared to other high voltage and power rectifiers, the SE70PB-M3/86A offers several advantages. It has high surface area, providing lower thermal resistance, allowing heat generated during operation to be more easily dissipated. The design also ensures low junction capacitance, providing fast switching time and increased efficiency. The device also provides high reverse voltage blocking capability, allowing it to handle extremely high voltage applications. Finally, it has a low forward voltage drop, helping to reduce power losses.

In conclusion, the SE70PB-M3/86A diode is a high voltage, high power rectifier that is part of Avago Technologies\' Schottky Series. This single component is capable of rectifying direct current, and has applications in a number of AC/DC and DC/DC power supplies and rectifier/regulator circuits. Its peak forward current of 70 amperes, reverse voltage of 800 volts, and peak forward voltage of 1.3 volts make it highly suitable for a variety of high voltage and power applications. The working principle behind the device involves the application of a reverse bias voltage, which creates a depletion layer that allows an anode potential to flow from anode to cathode. Finally, it offers several advantages, including high surface area, low junction capacitance, high reverse voltage blocking, and low forward voltage drop.

The specific data is subject to PDF, and the above content is for reference

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SE70PDHM3_A/H Vishay Semic... 0.25 $ 1000 DIODE GEN PURP 200V 2.9A ...
SE70PDHM3_A/I Vishay Semic... 0.25 $ 1000 DIODE GEN PURP 200V 2.9A ...
SE70PB-M3/87A Vishay Semic... 0.23 $ 1000 DIODE GEN PURP 100V 2.9A ...
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SE70PJ-M3/86A Vishay Semic... 0.23 $ 1000 DIODE GEN PURP 600V 2.9A ...
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SE70PBHM3/87A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2.9A ...
SE70PGHM3/87A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 400V 2.9A ...
SE70PBHM3/86A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 100V 2.9A ...
SE70PD-M3/87A Vishay Semic... 0.23 $ 1000 DIODE GEN PURP 200V 2.9A ...
SE70PJHM3/86A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 2.9A ...
SE70PG-M3/87A Vishay Semic... 0.23 $ 1000 DIODE GEN PURP 400V 2.9A ...
SE70PJHM3_A/H Vishay Semic... -- 1000 DIODE GEN PURP 600V 2.9A ...
SE70PBHM3_A/H Vishay Semic... 0.25 $ 1000 DIODE GEN PURP 100V 2.9A ...
SE70PJHM3/87A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 600V 2.9A ...
SE70PDHM3/86A Vishay Semic... 0.0 $ 1000 DIODE GEN PURP 200V 2.9A ...
SE70PG-M3/86A Vishay Semic... 0.23 $ 1000 DIODE GEN PURP 400V 2.9A ...
SE70PGHM3_A/I Vishay Semic... 0.25 $ 1000 DIODE GEN PURP 400V 2.9A ...
SE70PJHM3_A/I Vishay Semic... 0.25 $ 1000 DIODE GEN PURP 600V 2.9A ...
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