
Allicdata Part #: | SE70PGHM3/86A-ND |
Manufacturer Part#: |
SE70PGHM3/86A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 2.9A TO277A |
More Detail: | Diode Standard 400V 2.9A (DC) Surface Mount TO-277... |
DataSheet: | ![]() |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 2.9A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 7A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.6µs |
Current - Reverse Leakage @ Vr: | 20µA @ 400V |
Capacitance @ Vr, F: | 76pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The SE70PGHM3/86A is a single-phase, ultrafast, ifast and soft recovery diode. It features a dual-arm reverse parallel vented connecting structure, which provides higher accuracy in the diodes\' performance and provides improved reliability for the product in diverse application fields. This diode offers an ultrafast reverse recovery time along with a soft switching current characterized by leakage current over the operating temperature range. It also has a rectification current of up to 20 A and an avalanche current of up to 3 A.
The SE70PGHM3/86A is well suited for applications in power conversion circuits, such as AC/DC converters, DC/DC converters, motor control, communication, storage, and optical equipment. This diode is widely used in applications including: AC/DC converters, DC/DC converters, high and low voltage converters, telecom converters, power supplies and renewable energy systems.
The SE70PGHM3/86A features a high-efficiency Super Junction Technology with high and low voltage MOSFETs. This technology provides a number of advantages, including low noise levels, higher voltage breakdown, higher switching speed, faster turn-on and di/dt, improved thermal resistance, lower ESR, and improved reliability. Super Junction Technology is an advanced technology that enables high current densities with low forward voltage drops, while still providing the high efficiency performance.
The working principle of the SE70PGHM3/86A is based on the principle of junction rectification. When the diode is forward biased, electrons in the n-type semiconductor material flow to the p-type semiconductor material, resulting in the creation of an electron-hole pair. This causes current to flow through the diode. When the diode is reverse biased, the electrons in the p-type semiconductor material flow to the n-type, resulting in a depletion region between the two materials, which prevents current from flowing through the diode.
The SE70PGHM3/86A is a fast switching, high efficiency diode. Its wide forward and reverse voltage range of 85 V to 425 V, high current rating and low capacitance makes it ideal for use in switching power supplies and other applications. Its ultrafast and soft-recovery characteristic is beneficial for power supplies in synchro-nous rectification, as it reduces the power losses due to recovery time or switching losses. It also provides improved efficiency in applications where fast turn-on/off times and/or soft-switching is required.
In summary, the SE70PGHM3/86A is a single-phase ultrafast, ifast and soft recovery diode which is used in applications such as AC/DC converters, DC/DC converters, motor control and power supplies. Its high efficiency Super Junction Technology enables it to provide high current densities with low forward voltage drops and high efficiency performance. The SE70PGHM3/86A works on the principle of junction rectification and is beneficial for applications where fast turn-on/off times and/or soft-switching is required.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
SE70PB-M3/86A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PD-M3/86A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PGHM3_A/H | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PGHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PDHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PDHM3_A/H | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PDHM3_A/I | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PB-M3/87A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PBHM3_A/I | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PJ-M3/86A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 600V 2.9A ... |
SE70PJ-M3/87A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 600V 2.9A ... |
SE70PBHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PGHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PBHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PD-M3/87A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PJHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.9A ... |
SE70PG-M3/87A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PJHM3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 2.9A ... |
SE70PBHM3_A/H | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 100V 2.9A ... |
SE70PJHM3/87A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2.9A ... |
SE70PDHM3/86A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2.9A ... |
SE70PG-M3/86A | Vishay Semic... | 0.23 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PGHM3_A/I | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 400V 2.9A ... |
SE70PJHM3_A/I | Vishay Semic... | 0.25 $ | 1000 | DIODE GEN PURP 600V 2.9A ... |
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