SET030803

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	--
Diode Type:	--
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io) (per Diode):	15A
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 9A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	1µA @ 1000V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	--

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Diodes - Rectifiers - Arrays

SET030803 is a diode array for conducting a wide range of applications. It is a silicon-based 4-pin integrated circuit (IC) with a stand-off construction of 5x5mm. The SET030803 is a cost-efficient solution that includes a wide variety of features, such as high surge breakdown, low power dissipation and low leakage current. Additionally, it features optimized rectifier structures using the latest in rectifier technology to provide excellent performance and reliability.The SET030803 diode array is designed for conducting a wide range of applications, such as dc to ac conversion, frequency conversion, power distribution, and switching applications. It can be used in home applications, automotive systems, and various automotive electronics. It is also suitable for use in portable electronic devices, providing a high-reliability power supply solution.The primary application fields of the SET030803 diode array are rectifier, inverter, power distribution, and switching. As it’s an integrated circuit, the performance, reliability and power dissipation of this device depend much on its design. In addition, it can be used in various computer-aided designs (CAD) to optimize the performance and durability of the device.The working principle of a diode array is based on the PN junction characteristics of a semiconductor. In a typical diode array configuration, a large number of P-type material is created on a silicon wafer between two N-type regions, where a small region is blocked by an insulation layer. When a voltage is applied across the two regions, the electrons in the N-type regions are pushed towards the P-type region and form a channel in the insulation layer. This channel is called the depletion region, and its width determines the current flow.When voltage is applied in the direction of the arrow, minority carriers from the positive region move in the opposite direction due to the electric field. This polarization creates an electric field that forces majority carriers from the N-type junction. Meanwhile, majority carriers from the P-type junction move toward the N-type junction and a reverse electric current is established.By using this working principle, the SET030803 diode array is designed to allow a predetermined amount of current to flow in each rectifying direction, making it suitable for various applications. Furthermore, it features integrated protection devices to ensure that the components in the array are safe from over-current and thermal stress.Overall, the SET030803 diode array is a cost-efficient device that features some of the latest rectifier technologies. With its various features, it is ideal for machine, automotive and other applications where a high-reliability power supply is needed. Thanks to its impressive current flow and protection features, it is able to deliver excellent performance and reliability.

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