Allicdata Part #: | SET040212-ND |
Manufacturer Part#: |
SET040212 |
Price: | $ 181.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | ASSY RECT 600V 15A STD REC |
More Detail: | Diode Array 600V 15A Chassis Mount Module |
DataSheet: | SET040212 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 163.66500 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | -- |
Diode Type: | -- |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io) (per Diode): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 18A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 2µA @ 600V |
Operating Temperature - Junction: | -55°C ~ 175°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SET040212 is a diode array consisting of four integrated diodes in a single device. It is packaged in the smaller D-PAK (SMD), making it ideal for space-constrained applications. This device offers numerous advantages over traditional semiconductor rectifier technologies, such as low forward voltage drop and a larger power dissipation capability.
Application Fields of SET040212
SET040212 can be typically used in a variety of applications, ranging from power converters and automotive electronics to lighting and motor control systems. Since it is offered in the SMD version, this diode array is suitable for use in applications when space is at a premium. In addition, due to its low forward voltage drop, it can also be used in applications where efficiency is a top priority.
Working Principle of SET040212
The working principle of SET040212 can be explained in terms of three basic components, namely the cathode, anode, and gate. The cathode is where the current enters the device and is formed of the rectifying material, such as silicon. The anode is the return path and it is formed from an insulating material, such as glass or ceramic. The gate is the voltage regulating element which is responsible for setting the voltage drop across the diode.
When a voltage is applied to the cathode and anode, it creates an electric field which rapidly accelerates electrons and holes towards their respective anode and cathode. Electrons and holes cross the junction and reduce the voltage at the anode and cathode, respectively. The voltage between the cathode and anode is the forward voltage drop of the diode and it is regulated by the gate. As the current increases, the voltage drop decreases and vice-versa.
The SET040212 offers numerous advantages over traditional semiconductor rectifier technologies. Its low forward voltage drop and physically small nature make it ideal for space-constrained applications, while its larger power dissipation capability makes it suitable for high-current applications.
The specific data is subject to PDF, and the above content is for reference
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