| Allicdata Part #: | SF2002PTHC0G-ND |
| Manufacturer Part#: |
SF2002PTHC0G |
| Price: | $ 0.42 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 100V 20A TO247AD |
| More Detail: | Diode Standard 100V 20A Through Hole TO-247AD (TO-... |
| DataSheet: | SF2002PTHC0G Datasheet/PDF |
| Quantity: | 1000 |
| 10800 +: | $ 0.37926 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tube |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 20A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 20A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 10µA @ 100V |
| Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (TO-3P) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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SF2002PTHC0G diodes rectifiers single is a high-power diode primarily used in power electronic applications that require high current and medium voltage. It is typically used in inverters and other power conversion circuits. The SF2002PTHC0G is a low-forward-voltage drop solution, allowing for higher power dissipation and fewer components in high-power applications.
The SF2002PTHC0G is a semiconductor device with two terminals, a anode and a cathode. When applying a forward voltage, the diode forward-biases, allowing current to pass through to the anode. Inversely, when a negative or reverse voltage is applied, the diode reverse-biases, blocking the current and preventing power dissipation. This is known as rectification, and is the primary function of the SF2002PTHC0G.
The SF2002PTHC0G is designed for use in high-power systems, making it much more robust than its smaller counterparts. The device is capable of handling currents up to 55 amperes, with a reverse-biasing voltage rating of 200 volts. The device is capable of dissipating very high power, with a maximum power dissipation of 350 watts. This large power handling capability makes it ideal for high-power systems with lower losses.
The SF2002PTHC0G also has a relatively low forward voltage drop, making it suitable for low-loss applications. The forward voltage drop at the rated current is 2.5 volts, much lower than that of other diodes. The low voltage drop allows for the efficient use of power in high-power systems, further increasing its efficiency.
The device has a number of other features which give it versatility in a wide range of applications. It has a high voltage breakdown rating, ensuring that it stays safe even under high voltage conditions. It also has a low reverse leakage current, as well as a high thermal conductivity. This ensures that the device can handle large amounts of power without overheating.
The device is also designed to be extremely robust, with high-grade steel construction and a built-in thermal conductivity for extra protection. The device is also designed to be very efficient, with a low forward voltage drop and high current handling capabilities. The device is capable of handling high-current, high-voltage power applications, making it perfect for use in high-end electronics.
The SF2002PTHC0G is a great choice for high-power applications which require a low-loss, robust, and efficient semiconductor device. With its low forward-voltage drop, high current handling ability, and robust construction, the SF2002PTHC0G is the perfect choice for high-power electronics.
The specific data is subject to PDF, and the above content is for reference
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SF2002PTHC0G Datasheet/PDF