SF2004PTHC0G Allicdata Electronics
Allicdata Part #:

SF2004PTHC0G-ND

Manufacturer Part#:

SF2004PTHC0G

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 200V 20A TO247AD
More Detail: Diode Standard 200V 20A Through Hole TO-247AD (TO-...
DataSheet: SF2004PTHC0G datasheetSF2004PTHC0G Datasheet/PDF
Quantity: 1000
10800 +: $ 0.42336
Stock 1000Can Ship Immediately
$ 0.47
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

The SF2004PTHC0G is a general-purpose, silicon, single diode with an average forward current rating of up to 1A at an ambient temperature of 25℃. The device features a low reverse voltage of 50V and a fast switching speed of 300ns to ensure efficient functionality. The SF2004PTHC0G also features a low-leakage current of 500nA in reverse bias and a recovery time of 10ns.

Application field

SF2004PTHC0G single diodes are used in a wide range of applications, such as DC/DC converters, power supplies, lighting, AC/DC adapters, voltage multipliers, AC circuits, and any other high-voltage, high-frequency application that requires fast and low-loss rectification.

Working principle

The SF2004PTHC0G works by using the P-N junction to solely allow current in one direction. When no external voltage is applied, the P–region and N-region are separated and the P-N junction acts as an insulator that does not allow current to flow. When voltage is applied to the diode, the P–region and N-region begin to merge and current can flow through the device in one direction.

Once forward current has been established in the device, the voltage and current characteristics remain linear. If the negative 90% of the instantaneous applied reverse voltage is greater than the PN junction breakdown voltage, current will begin to flow in the reverse direction. In this state, the device is said to be in reverse breakdown, and the device current can increase exponentially while the junction temperature rises.

With the SF2004PTHC0G, the total forward voltage characteristics are equivalent to the developed forward voltage (Vf). Under certain conditions, the forward voltage will generally be highest immediately after the device is turned on and gradually decrease as the device temperature rises. At the same time, the reverse voltage characteristics of the device are equivalent to the developed peak reverse voltage (Vr).

Overall, this single diode is a robust, efficient and reliable component for rectification in a range of applications. It is an ideal choice for high-frequency and high-voltage circuits that require a fast switching solution.

The specific data is subject to PDF, and the above content is for reference

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