SF2008PTHC0G

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SF2008PTHC0G Application Field and Working Principle

The SF2008PTHC0G is a single diode suitable for high current, general purpose applications. It is an epitaxial planar diode manufactured using an advanced high voltage process. The device has a low forward voltage drop, excellent reverse leakage current, and low forward and reverse recovery time. It is manufactured using gold-doped gold plating technology and has an environmental resistance that exceeds MIL-STD-883. The SF2008PTHC0G is suitable for use in automotive, industrial, and consumer electronic applications.

The SF2008PTHC0G has a high current regulating capacity with a low on-state voltage drop. Its reverse characteristics include a typical instantaneous breakdown voltage of 1000V, a maximum continuous reverse voltage of 950V, and a maximum average power dissipation of 150W. Its reverse leakage current is typically below 1mA at a reverse voltage of 850V.

The SF2008PTHC0G has a wide forward surge capability with a maximum range of 8.0 to 18.0V. The device has an avalanche energy rating of 600mJ, with a cutoff current of 3.0A and a peak current of 4.0A. The device\'s forward recovery time is typically less than 20nS and its reverse recovery time is typically less than 15nS. The device is environmentally friendly and RoHS compliant.

To summarize, the SF2008PTHC0G is a single diode suitable for high current, general purpose applications. It has a wide forward surge capability and a low on-state voltage drop. Its reverse characteristics include a typical instantaneous breakdown voltage of 1000V, a maximum continuous reverse voltage of 950V, and a maximum average power dissipation of 150W. The device is suitable for use in automotive, industrial, and consumer electronic applications and is environmentally friendly and RoHS compliant.

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