SF2006GHC0G Allicdata Electronics
Allicdata Part #:

SF2006GHC0G-ND

Manufacturer Part#:

SF2006GHC0G

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 400V 20A TO220AB
More Detail: Diode Standard 400V 20A Through Hole TO-220AB
DataSheet: SF2006GHC0G datasheetSF2006GHC0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.26460
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SF2006GHC0G is a single-die rectifier diode that employs a wide range of industrial applications in virtually any low-power circuit. It has a fast switching capability, with a maximum forward voltage drop of only 3V at 10mA, and a peak reverse voltage capability of up to 30V. This makes it suitable for use in medium-to-high-voltage switch-mode power supply (SMPS) applications.

The SF2006GHC0G\'s high breakdown voltage and low on-resistance make it an excellent solution for powering circuits from AC line sources. It has an operating range of -55�C to 150�C, so it can handle a wide range of operating conditions. In addition, its fast switching time makes it ideal for switching high-frequency signals.

In terms of its electrical characteristics, the SF2006GHC0G is a single-die rectifier diode with a low forward voltage drop of only 2.7V at 10mA, and a peak reverse voltage of up to 19.5V. It has a maximum reverse current of 2mA, a low maximum junction temperature of 85�C, and a maximum peak current rating of 1A. As such, it is an ideal solution for protecting and regulating multiple circuit points in various low-power applications.

The SF2006GHC0G\'s working principle is based on the thermally induced electrical current known as the PN junction. In a PN junction, electrons and holes are separated by a semi-conductive material such as silicon. When a voltage is applied across the junction, the electrons and holes are forced to rearrange themselves, creating a region of electric charge in the middle. This imbalance between the electrons and holes is the basis for current flow.

The SF2006GHC0G has an anode, a cathode, and a gate. When the gate is left open, the anode and the cathode are short circuit, allowing free electron movement. When a voltage is applied to the gate, the electrons and holes are forced to rearrange themselves, creating a potential barrier across the junction. The resulting current flow is the rectified current, provided that the applied voltage is sufficient to push electrons through the PN junction.

The SF2006GHC0G is then used in a wide range of applications, including DC/DC converters, switch-mode power supplies, motor controllers, voltage stabilizers and inverters, as well as other low-power circuits. As such, it is a reliable and efficient choice for a variety of industrial needs.

The specific data is subject to PDF, and the above content is for reference

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