SG2023J-DESC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SG2023J-DESC is a general purpose epitaxial mesa NPN silicon Darlington transistor array, mainly used in drivers and low-power switching applications. This device, which has an obvious trade-off between current gain and input current/noise, is manufactured using a Bi-CMOS process. It is also popular among designers due to its handling of large currents.

The SG2023J-DESC device consists of two NPN transistors; the first one is an ordinary NPN transistor and the second one is a Darlington transistor. The first transistor is responsible for providing large current amplification, while the second one is responsible for maintaining low input current/noise. Furthermore, the Darlington configuration provides an extremely high current gain. This configuration allows the device to operate with a single power supply.

The SG2023J-DESC device is designed for current switching applications such as motor drivers, lamp drivers, relay drivers, and lamp ballast controls. It is also suitable for applications requiring low inrush current and low input current/noise. It can be used in various automotive and consumer electronic products.

The SG2023J-DESC device has a high current gain (Cgm) of around 100, which makes it suitable for driving high current loads. Furthermore, it has a low saturation voltage of 0.2V, which allows it to be used in junction with various types of loads. The device also exhibits good thermal stability, low-noise characteristics, and fast data switching speed.

The device works on the Darlington principle, which involves the combination of two transistor stages in order to achieve an extremely high current gain. The two transistors are connected such that the collector of the first transistor is connected to the base of the second one and both their emitters are connected together. This arrangement creates a high input resistance, allowing the device to operate with a minimum of power consumption.

The power consumption of the device is relatively low as compared to other transistors. Furthermore, the device has a good immunity to noise, making it suitable for use in low power switching applications. The device is also able to withstand large currents and voltages and has a high current gain compared to other transistors.

In conclusion, the SG2023J-DESC device is a general purpose epitaxial mesa NPN silicon Darlington transistor array, used for current switching applications. Its Darlington configuration provides an extremely high current gain and low power consumption. It has a high current gain, a low saturation voltage, a good thermal stability, low-noise characteristics, and fast switching speed. Additionally, the device is able to withstand large currents and voltages and is suited for use in automotive and consumer electronic products.

The specific data is subject to PDF, and the above content is for reference