SGR20N40LTF Allicdata Electronics

SGR20N40LTF Discrete Semiconductor Products

Allicdata Part #:

SGR20N40LTF-ND

Manufacturer Part#:

SGR20N40LTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 400V 45W DPAK
More Detail: IGBT Trench 400V 45W Surface Mount D-Pak
DataSheet: SGR20N40LTF datasheetSGR20N40LTF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 45W
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Current - Collector Pulsed (Icm): 150A
Voltage - Collector Emitter Breakdown (Max): 400V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The SGR20N40LTF is a type of insulated gate bipolar transistor, commonly referred to as an IGBT. It is specifically a single IGBT and has established itself as a trusted choice in numerous different applications as it is characterized by a very high-power rating and a good compromise between conduction and switching losses, with a very low VCE(sat) rating. This makes it ideal for hundreds of different roles, including the power supply of direct current motors, in the medical, industrial and automotive industries. It is also widely used in the aerospace and high energy physics sectors.

The SGR20N40LTF is a relatively large and robust transistor, capable of dealing with very high currents and voltages that are common in the various power electronics applications it is suitable for. The transistor can also be seamlessly combined with other IGBTs and components, allowing for hundreds of different combinations for different applications.

It is classified by its Trench and Fieldstop technologies, allowing for a higher cell density than most other IGBTs on the market. The Fieldstop technology prevents a strong current surge from resurfacing, so the chip is excited with fewer volts and a lesser chance of overheating. It also provides a much improved temperature gradient, maximising its robustness and dependability in the most challenging of power application environments.

The working principle of the SGR20N40LTF involves an insulated gate, as with any other type of transistor. This gate is connected to the source, and when a voltage is applied to the gate, it causes electrons to be injected into the channel between the source and the drain. This “injection” of electrons forms a conductive path between the source and the drain, allowing current to flow. It also creates a highly resistive layer between the source and drain, stopping the current from passing once the gate voltage is removed.

Due to its strong body construction, the SGR20N40LTF can operate very efficiently in temperature ranges of -25°C to 135°C, further exemplifying its reliability in a power environment. The chip is also adept at handling inductive or capacitive loads, and can handle both a DC and AC load without difficulty. Due to its powerful cooling system, the chip does not require heatsinks. This feature, combined with its efficiency and stability, makes it an excellent choice for systems looking for a reliable semiconductor option.

The SGR20N40LTF is extremely easy to integrate into new or existing power applications and is adaptable in numerous different applications due to its impressive power handling capabilities. Its robust qualities make it ideal for those looking for a reliable and efficient semiconductor option. It is a chip designed with a great deal of features and advantages that are ideal for those looking for an IGBT that is capable of handling comparatively high current.

The specific data is subject to PDF, and the above content is for reference

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