SGR20N40LTM Allicdata Electronics

SGR20N40LTM Discrete Semiconductor Products

Allicdata Part #:

SGR20N40LTM-ND

Manufacturer Part#:

SGR20N40LTM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 400V 45W DPAK
More Detail: IGBT Trench 400V 45W Surface Mount D-Pak
DataSheet: SGR20N40LTM datasheetSGR20N40LTM Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 45W
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
Current - Collector Pulsed (Icm): 150A
Voltage - Collector Emitter Breakdown (Max): 400V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SGR20N40LTM is a type of single-junction insulated gate bipolar transistor (SJ-IGBT). It is used in a wide range of applications, such as in high-current switching, power conversion, and other applications requiring a very high current capability. This insulation-gate bipolar transistor family offers a number of benefits in circuit design and high-power applications, including enhanced thermal properties, excellent output current capability, fast switching performance, and improved current or frequency control.

The SGR20N40LTM offers a wide range of advantages over traditional transistors. The insulation layer helps improve output switching performance and eliminate current leakage, while the high current capability provides flexibility in circuit design. In addition, the fast switching performance of SIGT20 makes it ideal for power-switching applications. The use of this type of transistor increases the reliability and longevity of circuits, as well as providing improved temperature stability.

The working principle of an SGR20N40LTM is based on the use of an insulated gate that controls the current flow between the collector and the emitter. The insulated gate is controlled by a signal, which is provided externally. This enables the transistor to be easily switched on and off, thus allowing precise control of the current flow. Additionally, the insulated gate reduces the voltage across the transistor by acting as an impedance.

The SGR20N40LTM is used in a wide range of applications, such as high-current switching, motor control, solid-state relays, power conversion, and other high-power switching applications. It is also suitable for use in a number of circuit designs, including transformer-coupled switch-mode power supplies and AC-DC converter circuits. Its high current capability and fast switching performance make it suitable for use in high-power applications, such as solar panel inverters.

The SGR20N40LTM is a single-junction insulated gate bipolar transistor that offers enhanced thermal properties, excellent switching characteristics, high current capability, and improved frequency control. It is ideal for a wide range of applications, from high power and high current switching applications to transformer-coupled switch-mode power supplies and AC-DC converter circuits. The insulation layer helps reduce current leakage, and the fast switching performance of this type of transistor increases the reliability and longevity of circuits.

The specific data is subject to PDF, and the above content is for reference

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