SGR2N60UFDTM Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SGR2N60UFDTM is an Insulated Gate Bipolar Transistor (IGBT) part of a Single category. Also referred to as power MOSFET, it is used in a variety of areas due to its combination of features, efficiency ratings and its high voltage capability. This transistor combines the power semiconductor performance of a silicon-controlled rectifier (SCR) with the low-on-resistance capability of a high-speed power MOSFET, giving it the correct characteristics for switching higher voltages and currents.

An IGBT single is used for power conversion in heavy machinery, household appliances and motor control applications, as well as in power supplies, solar inverters, UPS, air conditioning and welding applications. The high-voltage capability of single-IGBTs allow for more efficient, highly reliable designs for these products. To achieve higher efficiency, it is necessary to turn power devices at all times, allowing for more efficient use of the device. The IGBT single\'s ability to remain on until it is turned off by a low-power, low-voltage control circuit, makes it a unique and efficient solution for many applications.

The working principle of an IGBT single is that it combines the performance of a silicon-controlled rectifier (SCR) with the low-on-resistance capability of a high-speed power MOSFET. Power is turned on and off by activating either the gate-on or gate-off time of the IGBT. When the gate-on time is active, the IGBT will conduct current and so power is turned on. When the gate-off time is active, the IGBT will not conduct current and so power is turned off. The IGBT single can remain in an on state until it is turned off by a low-power, low-voltage control circuit.

SGR2N60UFDTM IGBTs should be operated in an environment with a temperature range of between -40 to 85 degrees Celsius. Additionally, the part has a 12A maximum operating current, 900V maximum operating voltage and a maximum junction temperature of 150 degrees Celsius. This specific IGBT has a maximum power dissipation of up to 150W, making it suitable for power supplies and electromechanical applications.

The SGR2N60UFDTM IGBT is one of the latest single-IGBTs to hit the market. It is designed to be used in applications requiring low switching losses and low-on-resistance for high power, high voltage, and high-current switching and control. This high voltage capability allows for higher efficiency, higher reliability designs for these products, making SGR2N60UFDTM an ideal option for motor control and power conversion. The Working principle of the IGBT single is that power is turned on and off by activating either the gate-on or gate-off time of the IGBT. This capability makes the IGBT single a unique and efficient solution for many power conversion applications.

The specific data is subject to PDF, and the above content is for reference