SGR2N60UFDTF Discrete Semiconductor Products |
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Allicdata Part #: | SGR2N60UFDTF-ND |
Manufacturer Part#: |
SGR2N60UFDTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 2.4A 25W DPAK |
More Detail: | IGBT 600V 2.4A 25W Surface Mount D-Pak |
DataSheet: | SGR2N60UFDTF Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 25W |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 1.2A, 200 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/80ns |
Gate Charge: | 9nC |
Input Type: | Standard |
Switching Energy: | 30µJ (on), 13µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 1.2A |
Current - Collector Pulsed (Icm): | 10A |
Current - Collector (Ic) (Max): | 2.4A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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:The SGR2N60UFDTF is a single-channel IGBT, which is an insulated gate bipolar transistor. It is smaller, more efficient and has higher power capabilities than earlier technologies. By operating at greater frequencies, customers can take advantage of smaller packages, allowing for higher power densities.
SGR2N60UFDTF devices are suitable for applications such as AC motor control, DC to AC power conversion, unidirectional and bidirectional DC motor control, and DC to DC power conversion. It is also used for DC switched-mode power supplies (SMPS) and in home appliances.
The SGR2N60UFDTF is a voltage controlled device with a turn-off capability that is superior to conventional bipolar transistors (BPT). It also has a higher speed and higher switching frequency, which helps to reduce the size of the package.
The working principle of the SGR2N60UFDTF can be divided into three main stages: triggering, turn-on, and turn-off. In the triggering stage, a gate voltage is applied to the gate of the IGBT, which causes electrons to flow through the gate. This creates an electric field which in turn allows for electrons to be released from the junction, forming an excess of electrons at the collector.
The turn-on stage is where most of the switching action takes place. As current flows from the collector to the emitter, current is stored in the body of the IGBT. The stored current then helps to generate a lower collector-emitter voltage (VCE), which helps the device to maintain a low on-state voltage drop for larger current applications.
Finally, the turn-off stage is the last stage of IGBT operation. At this stage, the gate voltage is reduced. This causes the stored current to reduce and eventually reach zero, resulting in an open switching state. The SGR2N60UFDTF can handle currents of up to 250A, making it ideal for various high power switching applications.
In conclusion, the SGR2N60UFDTF single-channel IGBT is an effective and reliable semiconductor device, which offers high performance and efficiency in various applications. With its superior switching properties and its ability to handle large currents, it is well suited for a wide range of applications, such as AC and DC motor control, DC to DC power conversion, and unidirectional and bidirectional DC motor control.
The specific data is subject to PDF, and the above content is for reference
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