SIB911DK-T1-E3 Allicdata Electronics
Allicdata Part #:

SIB911DK-T1-E3TR-ND

Manufacturer Part#:

SIB911DK-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 20V 2.6A SC75-6
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.6A 3.1W Surf...
DataSheet: SIB911DK-T1-E3 datasheetSIB911DK-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SIB911
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SIB911DK-T1-E3 is a Power MOSFET array, designed to provide efficient electrical isolation while also resisting high-temperatures and heavy currents. The SIB911DK-T1-E3 is designed to be a cost-effective alternative to expensive insulated gate examples. This Power MOSFET array is suited for use in many applications that require reliable switching and thermal management.

The SIB911DK-T1-E3 features a maximum current rating of 17A and the ability to operate in temperatures ranging from -40°C to 85°C. This makes it ideal for use in a variety of industrial, automotive, computer, and consumer electronics applications. The insulating gate feature allows for a more efficient electrical isolation and prevents device breakdown from thermal damage.

The SIB911DK-T1-E3 is composed of two N-channel MOSFETs in a dual-split common-source configuration. This allows for a greater current handling capacity at lower power input. The unit has a low drain-source on-resistance rating of 8.5mΩ and an on-state resistance of 1.4mΩ, which makes it well-suited for high-current and power applications. It also features low gate-threshold voltage and fast switching speed with a switching time of 0.1µs.

The SIB911DK-T1-E3 is widely used in applications that require fast switching and reliable electrical insulation. It can be used to switch high currents in relays, electronic motor control, automotive systems, renewable energy applications, or various switching and power supply distributors. This makes it a well-suited choice for the use in many applications that require fast switching, high power handling capability, and reliable electrical isolation.

The SIB911DK-T1-E3 can be used as a direct replacement for insulated gate MOSFETs in most applications. Its functionality and power handling capacity make it a viable choice for use in a wide range of applications. Its low on-resistance rating, high current handling capacity, and fast switching speed make it one of the more cost-effective alternatives on the market.

In conclusion, the SIB911DK-T1-E3 is a reliable and efficient Power MOSFET array. Its features allow it to be used in a variety of industrial and consumer applications, providing fast switching and reliable electrical insulation. Its low drain-source on-resistance, fast switching speed, and high current handling capacity make it an ideal choice for high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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