| Allicdata Part #: | SIB911DK-T1-GE3TR-ND |
| Manufacturer Part#: |
SIB911DK-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2P-CH 20V 2.6A SC75-6 |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.6A 3.1W Surf... |
| DataSheet: | SIB911DK-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Base Part Number: | SIB911 |
| Supplier Device Package: | PowerPAK® SC-75-6L Dual |
| Package / Case: | PowerPAK® SC-75-6L Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 3.1W |
| Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 295 mOhm @ 1.5A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.6A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Standard |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SIB911DK-T1-GE3 is an array of transistors, specifically, FETs and MOSFETs, created for various application fields. This array contains 76 transistors representing various types and sizes. It is often used for logic circuits and signal processing.
The primary purpose of this array of transistors is to facilitate the switching of electrical signals from one signal source to another. This enables signals to travel from one circuit to another, or from one component to another within a larger circuit. This is especially useful in signal processing, as it allows signals to be routed and amplified through a variety of stages. It is also useful in logic circuits, as transistors can be used to rapidly build logical operators such as AND and OR gates.
The working principle of the SIB911DK-T1-GE3 is relatively simple. It consists of two parts: the base and the emitter. The base voltage is modulated by applying a voltage to the emitter. This modulation can be adjusted to achieve the desired output. When the emitter voltage rises above the base voltage, the transistor is turned on and acts as a switch, allowing current to flow from its source to the load. Conversely, when the emitter voltage falls below the base voltage, the transistor is turned off, blocking current from travelling from its source to the load.
The SIB911DK-T1-GE3 is a versatile array of transistors, enabling a wide range of applications in both signal processing and logic circuits. Its simple yet effective design makes it a great solution for both new and existing projects. With its ability to rapidly switch electrical signals, the SIB911DK-T1-GE3 is an important component in the advancement of digital technology.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIB912DK-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 1.5A SC-... |
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SIB911DK-T1-GE3 Datasheet/PDF