SICRB10650CTTR

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The SICRB10650CTTR is a single rectifier diode with a fast switching time and excellent reverse recovery characteristics. It is made using a silicon-doped n-type substrate, and utilizes controlled avalanche amplification to create a low reverse recovery time. This diode is often used in high power, high frequency applications such as switching converters, snubbers, anti-transients, low power factor adjustments, and general diode applications.

The reverse recovery time of the SICRB10650CTTR is typically 28ns. Its maximum peak forward current is 200A, and its reverse voltage is 600V. It can withstand junction temperatures up to 200°C, and is capable of withstanding peak forward surge currents of 2000A.

The working principle of the SICRB10650CTTR rectifier diode is based on controlled avalanche amplification. When a diode is placed in a forward bias condition, the voltage across its terminals reaches a certain level, and the current through the diode increases dramatically. This current increases exponentially until it reaches a level that causes it to avalanche, and the voltage across the diode decreases rapidly. This is the avalanche breakdown voltage for a given diode. The SICRB10650CTTR is designed to minimize the time it takes to reach the avalanche breakdown voltage, which results in a reduced reverse recovery time.

The SICRB10650CTTR diode has a wide range of applications in high power and high speed applications. It is often used as a high current rectifier in switching converters, as an anti-transient diode in power supplies and applications, and as a low power factor adjuster in applications. It is also used as a snubber or clamping device in high frequency applications, as well as in general diode applications. It is also used in other high voltage and high current applications, where the fast switching time of the SICRB10650CTTR diode can be utilized.

In summary, the SICRB10650CTTR single rectifier diode has a fast switching time and excellent reverse recovery characteristics. It has a reverse recovery time of 28ns, a maximum peak forward current of 200A, and a reverse voltage of 600V. It is used in high power and high frequency applications such as switching converters, snubbers, anti-transients, low power factor adjustments, and general diode applications. Its working principle is based on controlled avalanche amplification, which minimizes the time it takes to reach the avalanche breakdown voltage and, thus, reduces the reverse recovery time of the diode.

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