SICRB6650TR

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The SICRB6650TR is a Single-Phase, Standard Recovery Diodes, Silicon Rectifier. It is designed to meet today’s needs for rectifying power supplies, voltage multipliers and low-voltage power rectification applications. The innovative design minimizes losses, resulting in improved efficiency and better overall results.

The SICRB6650TR provides superior rectifying performance, with a power dissipation rating of 3 A, a current rating of 40 V and a reverse leakage current of 10 mA. It also has a forward voltage drop of 5.9 V, allowing for a low forward voltage drop. The reverse voltage rating is 600 V, which provides a much higher level of reverse voltage protection than other diodes in its class. With a fast recovery time of 50 ns, the SICRB6650TR can help reduce the overall power losses.

Aside from the impressive specifications, the SICRB6650TR has a wide range of applications that one can take advantage of. It can be used to protect against short-circuit faults, to rectify special step-down transformers, to provide protection against overvoltage, to create unleaded packages for applications such as battery-powered systems, and to provide protection for AC rectifiers.

The working principle of the SICRB6650TR is based on the semiconductor diode principle, wherein current is conducted through the diode on account of non-linearity. This is marked by a certain peak or valley, usually seen at junction level, which allows electric power to flow through the device. When an external voltage is applied to the diode, current will flow that is governed by the equation "I = I0 exp(Vd/(-kT))," where I0 is the reverse saturation current, k is Boltzmann’s constant, T is the diode’s operating temperature and Vd is the applied voltage.

In other words, the amount of current that can flow through the SICRB6650TR is determined by the variable voltage applied to the diode. The higher the applied voltage, the more current the device will be able to take. The reverse current of the SICRB6650TR is also determined by the applied voltage.

The performance of the SICRB6650TR is further enhanced by its wide range of assembly options, including through-hole, surface-mount and flat-packs. This allows for greater flexibility and easier installation, and helps improve the efficiency of the device.

In summary, the SICRB6650TR is a Single-Phase, Standard Recovery Diodes, Silicon Rectifier designed for rectifying power supplies and low-voltage applications. It offers superior performance, with a power dissipation rating of 3 A, a current rating of 40 V and a reverse leakage current of 10 mA. Additionally, it has a forward voltage drop of 5.9 V and a reverse voltage rating of 600 V. The device is also easy to install, with a wide range of assembly options, including through-hole, surface-mount and flat-packs, and uses the semiconductor diode principle to conduct electricity. Altogether, the SICRB6650TR is a great choice for rectifying power supplies and low-voltage applications, making it a great choice for those who need an effective and efficient device.

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