SIDC02D60C6X1SA4 Allicdata Electronics
Allicdata Part #:

SIDC02D60C6X1SA4-ND

Manufacturer Part#:

SIDC02D60C6X1SA4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE GEN PURP 600V 6A WAFER
More Detail: Diode Standard 600V 6A (DC) Surface Mount Sawn on ...
DataSheet: SIDC02D60C6X1SA4 datasheetSIDC02D60C6X1SA4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Description

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A SIDC02D60C6X1SA4 is a single phase silicon rectifier diode with a maximum operating junction temperature of 200℃. It is widely used in industrial, commercial, automotive and many other applications to provide an effective diodic solution. It has a wide operating range due to its low forward voltage drop and high reverse current leakage capability.

The SIDC02D60C6X1SA4 is composed of a single junction P-type silicon diode in a plastic case, which offers a higher reverse voltage breakdown than other rectifier diodes of the same rating. It is designed to operate at a maximum forward current of 2 Amps and a peak forward current of 6 Amps. In addition, the SIDC02D60C6X1SA4 is capable of withstanding high temperature, vibration, noise and electromagnetic interference and can withstand surge currents up to 10A.

The working principle of the SIDC02D60C6X1SA4 follows traditional rectifier diode circuit design. When a forward voltage is applied to the diode, then current will flow through it allowing the charge to flow from anode to cathode. The voltage potential on the cathode will be lower than the voltage potential on the anode and is referred to as the forward voltage drop. When a reverse voltage is applied, then the diode will become reverse biased thus no current will be able to flow through it, creating a barrier to the flow of charge.

The SIDC02D60C6X1SA4 can be used for various purposes including: power rectification, voltage regulation, voltage clamping, surge protection, reversing polarity, protection from transients, regulation of bias and protection from electrostatic discharge. It is often used as a protection diode in electrical circuits, such as motor speed controllers and motor starters, in automotive applications because its low forward voltage drop and high reverse current leakage capability make it a reliable power rectifier.

The SIDC02D60C6X1SA4 is also used in AC-DC converters, DC-AC inverters and for the generation of switched output signals. Furthermore, it can be used for the control of power electronics, air conditioners, and intelligent lighting systems. In addition, it is used in communication circuits and in current-limiting applications.

In conclusion, the SIDC02D60C6X1SA4 is a single junction P-type silicon diode with a maximum operating junction temperature of 200℃. It has a wide operating range due to its low forward voltage drop and high reverse current leakage capability, and is suitable for use in many industrial and commercial applications. Its versatile nature makes it a reliable and effective solution in the production of power rectification, voltage control, voltage clamping, surge protection and reverse polarity protection.

The specific data is subject to PDF, and the above content is for reference

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