SM6T100AHE3/52 Allicdata Electronics
Allicdata Part #:

SM6T100AHE3/52-ND

Manufacturer Part#:

SM6T100AHE3/52

Price: $ 0.11
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 85.5V 137V DO214AA
More Detail: N/A
DataSheet: SM6T100AHE3/52 datasheetSM6T100AHE3/52 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.09925
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 85.5V
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Current - Peak Pulse (10/1000µs): 4.4A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
Base Part Number: SM6T
Series: Automotive, AEC-Q101, SM6T, TransZorb®
Description

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TVS - Diodes

SM6T100AHE3/52 Application Field and Working Principle

Transient Voltage Suppressor Diode (TVS) is a diodes devised for the protecting of electronic circuits from transients over-voltages, such as the voltage caused by load dumps, induced radiations and electrostatic discharge. TVS diodes are designed for surge protection with low leakage current and low capacitance. One example of such diode is the SM6T100AHE3/52.

SM6T100AHE3/52 is a low-leakage current (Ileakage : < 0.1uA), ultra-small and ultra-low capacitance (C : 0.12pF typ.) TVS Diode Device, designed using a PNP structure for ESD (Electrostatic Discharge) and EFT (Electric Fast Transients) protection of various systems.

The application field of SM6T100AHE3/52 is quite wide and it contains automotive systems, communications systems, medical systems and network equipment. SM6T100AHE3/52 is the preferred diode for applications that require robust over-voltage protection with high power dissipation, low-capacitance, and low-leakage current.It is an ideal solution for device performance and protecting from the destructions of over-voltage transients.

The working principle of TVS diode is based on the fact that when an over-voltage arises, a diode can be quickly switched from a high-resistance state (off) to a low-resistance state (on) to clamp the voltage across the device. The working principle of SM6T100AHE3/52 is same diodes. The diode is accurately designed to have an avalanche break down voltage VBR of 6 V and can withstand repetitive peak pulse currents up to 100 A (Ippm) with an 8/20uS Pulse Waveform. The reverse stand-off voltage (Vrwm) is 5.5V with a maximum clamping voltage for repetitive transient voltage (Vc max) of 11.7V.

In conclusion, SM6T100AHE3/52 is an example of TVS diode suitable for a large variety of applications. The diode can be used for the protection from transients over-voltages and it offers excellent protection capability with low leakage current and low capacitance. SM6T100AHE3/52 is the ideal choice for device performance and protection from the destructions of over-voltage transients.

The specific data is subject to PDF, and the above content is for reference

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