SMBG12A/54 Allicdata Electronics
Allicdata Part #:

SMBG12A/54GITR-ND

Manufacturer Part#:

SMBG12A/54

Price: $ 0.12
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 12V 19.9V DO215AA
More Detail: N/A
DataSheet: SMBG12A/54 datasheetSMBG12A/54 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1500 +: $ 0.10886
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Current - Peak Pulse (10/1000µs): 30.2A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS – Diodes

TVS - Diodes, also known as Transient Voltage Suppression (TVS) Diodes are electrical devices designed to protect sensitive electronic devices against electrostatic discharge, high voltage transients, and other voltage-based issues. These diodes, when used properly, act as a low-resistance path for the current and instantaneously dissipates the current, allowing the electronic equipment to remain functioning and safe from damage.

SMBG12A/54 Application Field and Working Principle

The SMBG12A/54 is a unidirectional low-capacitance Silicon Avalanche Diode (SAD) designed for transient voltage surge suppression. It is ideally suited for application in EFT protection, EDS protection, Lightning Transients, EMP protection, and other high-energy phenomena.The SMBG12A/54 working principle is based on its construction and the substrate doping profile. The diode is constructed with a P+ semiconductor layer, which is coupled to an N− junction. When a positive potential is applied to the diode, the P+ layer, along with its accompanying N− layer, conducts current, forming the avalanche breakdown effect which instantly and effectively dissipates the current or voltage and protecting the sensitive components.

The SMBG12A/54 is able to handle high-energy transients. In order to ensure proper operation, the peak PIV (Peak Inverse Voltage) rated of the diode must be high enough to contain the peak energy, which is typically greater than the steady-state voltage. This diode is excellent in its ability to quickly activate and collapse transients with a very low clamping voltage. Added to these benefits, the SMBG12A/54 features a very high surge rating capability due to its open zener construction. This makes it ideal for a variety of applications.

In addition, the SMBG12A/54 diode has an internal resistance that is very low. This means the diode can be used on higher frequency circuits while maintaining excellent performance characteristics. The device also has a low thermal resistance, enabling it to operate safely even in high temperatures.

Furthermore, the SMBG12A/54 has a very low capacitance, which eliminates the need for external capacitors. Its symmetrical design makes it very small in size and very efficient. This makes it ideal for space-constrained designs.

Overall, the SMBG12A/54 Transient Voltage Suppression (TVS) Diode is an excellent choice for a variety of applications. It has a low capacitance, high surge rating, and a symmetrical design which makes it ideal for use in a wide variety of situations. Its low thermal resistance and low internal resistance make it well suited for high frequency applications. By utilizing this diode, you can ensure that your application is both safe and functional.

The specific data is subject to PDF, and the above content is for reference

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