SMBG8.5CAHE3/5B Allicdata Electronics
Allicdata Part #:

SMBG8.5CAHE3/5B-ND

Manufacturer Part#:

SMBG8.5CAHE3/5B

Price: $ 0.27
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 8.5V 14.4V DO215AA
More Detail: N/A
DataSheet: SMBG8.5CAHE3/5B datasheetSMBG8.5CAHE3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.24079
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Current - Peak Pulse (10/1000µs): 41.7A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 14.4V
Voltage - Breakdown (Min): 9.44V
Voltage - Reverse Standoff (Typ): 8.5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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< p >The SMBG8.5CAHE3/5B TVS diodes offers a wide range of applications and are highly suitable for over voltage protection. This type of diode is used extensively in different electronic devices, such as computers, audio systems, and other digital electronic devices. < /p >< p >The working principle of this type of diode is based on the fact that when applied with a voltage greater than its breakdown voltage, the device will conduct current and, in turn, thus offer protection against over voltage. This is achieved by the device using a semiconductor material with very high breakdown voltage and a low on-state resistance. The material used in these diodes will vary depending on the voltage self-stabilization ability and the application requirements. The diode structures can be divided into two main categories: PN junction and Schottky diode. < /p >< p >The PN junction diode structure has both n-type and p-type materials that can be combined in order to form a highly reliable connection at the PN junction. This diode structure has a low voltage drop and low on-state resistance. This material is widely used in order to protect electronic systems from voltage surges and in protecting high voltage electrical lines. The Schottky diode structure, on the other hand, is designed to have a low barrier height and offers enhanced electrical characteristics. This diode structure also offers a low voltage drop and high peak diode current.  < /p >< p >SMBG8.5CAHE3/5B TVS diodes are highly used in audio systems and other digital electronic devices for over voltage protection. This type of diode has a low reverse breakdown voltage and a low on-state resistance. Its main application is in protecting circuits from high level voltage surges such as electrostatic discharges.  < /p >< p >These diodes are designed to provide protection against voltage surges and high frequency electrical noise, as well as protect devices from short circuits and voltage irregularities. The diodes are fairly robust and offer enhanced protection against high frequency noise and transient current spikes. The SMBG8.5CAHE3/5B is a widely used TVS diode, due to its good electrical characteristics, low cost, and easy availability. < /p >< p >In conclusion, SMBG8.5CAHE3/5B TVS diodes offer several advantages over other types of diodes used in electronic systems. They are highly reliable and offer protection against over voltage, high frequency electrical noise, and voltage irregularities. They are also highly cost effective, which is why they are becoming increasingly popular in various electronic systems. < /p >

The specific data is subject to PDF, and the above content is for reference

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