SMBG12A-E3/5B Allicdata Electronics
Allicdata Part #:

SMBG12A-E3/5B-ND

Manufacturer Part#:

SMBG12A-E3/5B

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 12V 19.9V DO215AA
More Detail: N/A
DataSheet: SMBG12A-E3/5B datasheetSMBG12A-E3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.13330
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Current - Peak Pulse (10/1000µs): 30.2A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes

TVS diodes, also known as transient voltage suppressors reverse breakdown within a surge, and thus preventing the voltage rise or current from exceeding a certain threshold. TVS diodes can commonly be found in power supplies, high voltage applications, motor controllers, I/O communication lines and more.

SMBG12A-E3/5B

The SMBG12A-E3/5B is a 12A, 50V, transient voltage suppressor (TVS). This TVS diode is leadless and is designed for surface mount applications and use as a Plated Through-Hole (PTH) on printed circuit boards (PCBs). It is designed specifically for applications requiring surge current levels up to 12A and voltage levels up to 50V.

Application Field

The SMBG12A-E3/5B TVS diode can be used for a range of applications from consumer electronics, telecommunications, office automation, automotive, and aerospace. It is most commonly used for power protection in high-voltage and high-speed data transmission applications.

Working Principle

The working principle of the SMBG12A-E3/5B is based on the Zener principle. This is based on the concept that when a reverse-biased voltage applied to the diode is greater than the Zener breakdown voltage (VZ) of the diode, a current will flow through the diode. This current is referred to as the Zener current (IZ).

When a surge of voltage or current exceeds the Zener breakdown voltage (VZ) of the diode, the diode will surge with the excess voltage or current. This surge will cause the voltage or current to be diverted away from the device being protected by the TVS diode. The TVS diode’s surge capacity and response time protect the device against voltage or current spikes.

The specific data is subject to PDF, and the above content is for reference

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