SMBG45C-E3/5B

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TVS diodes are an essential component of almost any electronic circuitry, and the SMBG45C-E3/5B is one of the most popular and commonly used diodes available. It is a high-reliability, ultra-low capacitance, bidirectional transient voltage suppressor (TVS) that can be used in a wide variety of applications. The SMBG45C-E3/5B is used for protecting sensitive electronic components against voltage transients without affecting the normal operation of the circuit.

The SMBG45C-E3/5B is a multilayer, bidirectional diode that is designed to protect against high-speed transients such as electrical surges, thunderstorms, and electrostatic discharge. The diode is also resistant to repetitive high transient voltages and is rated for operation up to 20,000 watts peak. The diode is designed to divert the current surcharge away from vulnerable circuitry, and is able to withstand electrostatic discharges up to 30 kilovolts (kV).

The diode is designed to have a fast and stable fail-safe operation, allowing for reliable protection of sensitive electronics in diverse conditions. In order to achieve a low capacitance, the SMBG45C-E3/5B uses a wide terminal gap to ensure low capacitance between the anode and cathode. This not only allows for fast switching, but also reduces the risk of false triggering due to capacitive coupling. The SMBG45C-E3/5B also uses an active low-level diodes manufacturing process to ensure low minimum breakdown voltage and maximum peak power ratings.

The SMBG45C-E3/5B is suitable for a variety of applications, such as automotive and industrial, networking, and computer and communications systems. In terms of automotive applications, the diode can be used for protecting ECU, starter motors, alternators, headlights, and other automotive components from transient electrical spikes. For industrial applications, the diode can be used for protecting motor controllers, drives, relays, contactors, and other equipment. In networking applications, the diode can be used for protecting communication equipment from power surge and lightning strikes. Lastly, in computer and communications systems, the diode can be used for protecting data and telecommunication, as well as networking, expansion cards, and other components.

In terms of working principle, the SMBG45C-E3/5B utilizes an avalanche breakdown triggered by a sharp and fast rise of voltage at the junction of P and N layers. During the avalanche breakdown, electrons gain enough energy to create electron-hole pairs, which causes a flow of current with a low-level voltage drop. This low-level voltage drop prevents damage to the protected component or circuit. The diode can also spread current over large areas, which prevents any single area within the device from exceeding the rated maximum power dissipation of 20,000 watts.

The SMBG45C-E3/5B is an incredibly versatile and reliable diode for a wide range of applications. Its low-capacitance design allows it to perform reliably in a variety of conditions, and its high maximum power rating makes it ideal for protecting sensitive electronics from transient voltage spikes. In addition, its wide terminal gap ensures a low capacitance between the anode and cathode, which further reduces the risk of false triggering due to capacitive coupling. With its fast and stable fail-safe performance, the SMBG45C-E3/5B is the perfect diode for protecting systems against high-speed transients.

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