SMBG45AHE3/52 Allicdata Electronics
Allicdata Part #:

SMBG45AHE3/52-ND

Manufacturer Part#:

SMBG45AHE3/52

Price: $ 0.22
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 45V 72.7V DO215AA
More Detail: N/A
DataSheet: SMBG45AHE3/52 datasheetSMBG45AHE3/52 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.21102
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Current - Peak Pulse (10/1000µs): 8.3A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes are widely used in electronics to prevent overvoltage damage to circuits, and to protect devices such as computers, TVs, mobile phones, and other device from damage caused by transient electrical surges. The SMBG45AHE3/52 is a transient voltage suppressor diode, designed to provide improved protection from overvoltage and overcurrent conditions.

The SMBG45AHE3/52 is a three-terminal ceramic-core diode, and it is very effective at protecting circuit boards from damage due to transient surges, especially from the automotive and industrial sectors. The diode features a low forward voltage drop and is capable of withstanding up to 3.5 KV of peak surge power. The SMBG45AHE3/52 can be used as an ESD suppressor or line clipper in a wide variety of applications where transient protection is required.

The SMBG45AHE3/52 is designed to be very effective at suppressing voltage transients caused by inductive load switching, power cross, and lightning or other electrical disturbances. The diode has a low forward voltage drop and a fast response time, which make it ideal for ESD protection and line clipper applications. The SMBG45AHE3/52 is also designed to provide improved ESD protection for sensitive, high-frequency circuits. The diode has a very high transient energy absorption capacity, which makes it suitable for suppressing even very large transient voltage spikes.

The SMBG45AHE3/52 is designed to be used in a wide range of applications, such as automotive electronics, communications equipment, computers, consumer electronics, and industrial applications. The diode is suitable for use with both AC and DC power supplies. It can also be used as an ESD suppressor in consumer electronics and in automotive applications, where it can protect against electrostatic discharge.

The working principle of the SMBG45AHE3/52 is based on a semiconductor block that is connected between two AC or DC power supplies. When the diode is connected between the two supplies, it will act as a conductor if the voltage across it exceeds its breakdown voltage. When this happens, the diode will quickly absorb the excess voltage, preventing any damage to the circuit and reducing the peak transient voltage.

In summary, the SMBG45AHE3/52 is a three-terminal ceramic-core diode designed to provide effective protection from overvoltage and overcurrent conditions. The diode features a low forward voltage drop and is capable of withstanding up to 3.5 KV of peak surge power. The diode is designed to provide improved ESD protection for sensitive, high-frequency circuits. It is suitable for a wide range of applications, such as automotive electronics, communications equipment, computers, consumer electronics, and industrial applications. The working principle of the diode is based on a semiconductor block that is connected between two AC or DC power supplies, and it is very effective at suppressing voltage transients caused by inductive load switching, power cross, and lightning or other electrical disturbances.

The specific data is subject to PDF, and the above content is for reference

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