
Allicdata Part #: | SMBG4737CE3/TR13-ND |
Manufacturer Part#: |
SMBG4737CE3/TR13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 7.5V 2W SMBG |
More Detail: | Zener Diode 7.5V 2W ±2% Surface Mount SMBG (DO-215... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 7.5V |
Tolerance: | ±2% |
Power - Max: | 2W |
Impedance (Max) (Zzt): | 4 Ohms |
Current - Reverse Leakage @ Vr: | 10µA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-215AA, SMB Gull Wing |
Supplier Device Package: | SMBG (DO-215AA) |
Base Part Number: | SMBG4737 |
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The SMBG4737CE3/TR13 diode is one of many single Zener diodes available. Zener diodes are designed to provide a safe and consistent flow of voltage and current in applications that require it. It acts as an alternative source for power and its uses range from rectifying overloads in power grids to providing voltage stabilization in audio applications. The SMBG4737CE3/TR13 diode is better suited for use in lighter current applications such as logic levels and radio frequency applications.
The SMBG4737CE3/TR13 diode uses a Zener breakdown method to create a steady current flow. Zener breakdown is a process of vaporizing a reverse biased PN junction semiconductor device to create two conducting paths. The breakdown occurs when the voltage across the junction reaches a specific level, depending on the type of device used. The SMBG4737CE3/TR13 diode has a breakdown voltage of 4.7 volts.
In Zener breakdown, the current flowing through the junction is driven by the potential difference and is limited by the junction\'s resistance. This arrangement allows for a steady flow of current and voltage across the PN junction. As the voltage exceeds a certain level, the Zener effect kicks in, which causes a buildup of ions near the junction and reduces the number of carriers passing through it, leading to a limited flow of current.
The SMBG4737CE3/TR13 diode is useful for protecting sensitive circuits and providing reliable power in a range of applications, such as radio frequency applications, logic levels and other precision operations. It can also be used in inverter and converter circuits to prevent them from being damaged by over voltage and transient current spikes. The diode is made with the same PN junction as any other diode, but the doping levels and breakdown voltages are set in order to create the Zener effect.
The advantages of the SMBG4737CE3/TR13 diode include its low cost and its consistent performance, even when faced with heavy currents. Its low temperature coefficient ensures that the breakdown voltage and operating voltage remain consistent even in temperature changes, and its high power handling capability makes it useful in a variety of applications. The diode is also very reliable and can be used many times without fail, making it a popular choice for consumer electronics.
The SMBG4737CE3/TR13 diode is an excellent choice for applications where consistent performance, low cost, and reliable protection are desired. With its low temperature coefficient, high power handling capability, and low cost, it is a great solution for many projects. The single Zener diode is designed to provide a steady and safe flow of current and voltage, and is perfect for a variety of electronic applications.
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