SMBG5374C/TR13 Allicdata Electronics
Allicdata Part #:

SMBG5374C/TR13-ND

Manufacturer Part#:

SMBG5374C/TR13

Price: $ 1.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 75V 5W SMBG
More Detail: Zener Diode 75V 5W ±2% Surface Mount SMBG (DO-215A...
DataSheet: SMBG5374C/TR13 datasheetSMBG5374C/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.34064
Stock 1000Can Ship Immediately
$ 1.49
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 5W
Impedance (Max) (Zzt): 45 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 54V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-215AA, SMB Gull Wing
Supplier Device Package: SMBG (DO-215AA)
Base Part Number: SMBG5374
Description

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The SMBG5374C/TR13 is a single Zener Diode from the Samsung semiconductor family. This diode is designed for high voltage breakdown applications, with a maximum peak inverse voltage (PIV) rating of 5.3V DC. It also has an operating temperature range of -55°C to +150°C, and can withstand surges up to 2A for one second.

The SMBG5374C/TR13 is typically used to provide avalanche breakdown protection for sensitive components and circuits in applications such as battery-powered electronic devices, power circuits and automotive electronics. It is also suitable for general protection circuits, telecom line surge protection, and protecting secondary side circuits in inverters.

The SMBG5374C/TR13 is designed to have a reverse breakdown voltage ranging from 4.7 to 5.3V DC, with a maximum reverse leakage current of 100mA at 5.3V DC. Its non-repetitive peak pulse current rating is 200mA. It is constructed with a silicon thermal oxynitride diode chip on the lead frame, and is housed in a hermetic SOD-123 package for enhanced reliability and performance in harsh environments.

The working principle of the SMBG5374C/TR13 is based on the Zener effect, which states that when a reverse bias voltage is applied to a semiconductor junction, the resistance between the two junctions becomes very low. When the reverse bias voltage reaches a certain level, called the breakdown voltage, the depletion region around the junctions collapses and current begins to flow. This is known as Zener avalanche.

The SMBG5374C/TR13 provides high-voltage breakdown protection by breaking the circuit in the event of an over-voltage situation. It is designed to have a low forward voltage drop, and its low-leakage current rating ensures that it only activates when necessary. The zener diode is able to break the circuit by clamping the voltage at a specified level. This provides an effective way of protecting sensitive components and circuits from over-voltage damage.

In summary, the SMBG5374C/TR13 is a single Zener diode from the Samsung semiconductor family. It is designed for high voltage breakdown applications and provides high-voltage protection and low leakage current. The diode is suitable for a wide range of applications such as battery-powered electronic devices, power circuits and automotive electronics, and telecom line surge protection. The Zener effect, which states that current begins to flow when the reverse bias voltage reaches a certain level, is the working principle of the SMBG5374C/TR13.

The specific data is subject to PDF, and the above content is for reference

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