SMBG6.5HE3/5B Allicdata Electronics
Allicdata Part #:

SMBG6.5HE3/5B-ND

Manufacturer Part#:

SMBG6.5HE3/5B

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 6.5V 12.3V DO215AA
More Detail: N/A
DataSheet: SMBG6.5HE3/5B datasheetSMBG6.5HE3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Pulse (10/1000µs): 48.8A
Base Part Number: SMBG
Supplier Device Package: DO-215AA (SMBG)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, TransZorb®
Voltage - Clamping (Max) @ Ipp: 12.3V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressors) diodes are components capable of protecting devices from electrostatic discharge, power surges and other related phenomena. Where in a normal diode the current can flow in one way only, in a TVS diode the current can flow in both ways, being able to absorb the energy produced by those phenomena in the form of heat. Therefore, the protection of components or sensitive devices from potentially destructive situations becomes possible. Among the common TVS diodes, we find the SMBG6.5HE3/5B.

The SMBG6.5HE3/5B have multiple applications in different fields like consumer electronic products, telecommunication devices, signal lines, power supplies, etc. Generally, its main purpose is to protect against electromagnetic transients such as electric arcs, lightning events, power surges, etc. It is offered in a SOD-323F small package, enabling it to be placed on PCB in applications limited with space constraints.

As for its operation principles, the SMBG6.5HE3/5B implements the concept of protection from voltage transients by governing the behavior of electrons in a circuit. Its silicon structure consists of two PN junctions in series, and the Zener junction situated closest to the anode terminal is located in the forward direction. This type of configuration implies that the diode can conduct in both directions.

The presence of a Zener junction in the forward direction allows the current to be redirected, being able to absorb volts of power during a voltage transient. When a certain overvoltage exceeds the normal operating voltage threshold, the Zener junction breaks down and the current is diverted into a low impedance (parasitic) diode. The current is then dissipated into the PN junction\'s junction and dissipated into the bead.

The SMBG6.5HE3/5B presents an excellent balance between its robustness in a compact design offering a reverse dissipation of 8.5W (50ms) peak pulse at 1.0A, as well as an excellent clamping ratio and low capacitance value. Apart from its applications in signal lines, power supplies, and consumer electronic products, this diode exhibits a very good performance in industrial applications like motor drivers, motor control, smart meters, etc.

In conclusion, the SMBG6.5HE3/5B is an ideal diode for protection against voltage transients in different applications due to its versatility, compact design, and robust performance. Its Zener junction configuration allows it to absorb large voltages and dissipate them into its PN junction, protecting other components from potential damage.

The specific data is subject to PDF, and the above content is for reference

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