SMCG110A-E3/9AT Circuit Protection

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The SMCG110A-E3/9AT is a fast diode with a Transient Voltage Suppression (TVS) diode technology. It is designed to protect vulnerable components such as devices on a printed circuit board from damaging events such as electrical overstress (EOS) or electrostatic discharge (ESD). The SMCG110A-E3/9AT is a component of the TVS TVS/Diodes product line from On Semiconductor. This device is available in a 1.6mm x 1.2mm DO-214AC package and rated for 1KW peak pulse power (tp), 6.5V stand-off voltage, and 1A peak impulse current (tp). The SMCG110A-E3/9AT offers fast response time (< 1nS), low capacitance (< 2pF), and low clamping voltage (< 9V).

TVS diodes are used in a variety of applications, including computers, consumer electronics, communications, and industrial systems. They are ideal for protecting high-speed data lines from ESD or EOS events, and they are often used as part of an EMC design to ensure that no such events occur. TVS diodes are also used to protect sensitive components, such as CMOS logic, transistors, and integrated circuits, from damage due to EOS or ESD. The SMCG110A-E3/9AT is specifically designed for fast turn-on protection of I/O lines in personal computers, cell phones, PDAs, and other mobile devices.

The working principle behind the SMCG110A-E3/9AT is based on the avalanche breakdown of a reverse-biased PN junction. When an electrical pulse of sufficient magnitude is applied to the diode, the charge carriers in the junction experience an energy transfer that causes them to accelerate. This creates an avalanche breakdown, and the diode switches from a reverse bias to a forward bias, allowing the current to flow in the opposite direction. This allows the diode to shunt the current away from sensitive components and provides protection against ESD or EOS events.

The SMCG110A-E3/9AT features fast response time, low capacitance, and low clamping voltage, making it an ideal protection device for high-speed data lines. The fast response time ensures that the diode can turn on quickly enough to provide protection during ESD or EOS events, while the low capacitance ensures that the diode will not interfere with signal integrity or reduce signal bandwidth. The low clamping voltage also ensures that the diode will not damage sensitive components with overvoltage.

The SMCG110A-E3/9AT is a high-performance TVS diode designed to protect vulnerable components from ESD and EOS events. It is ideal for use in mobile devices, computers, consumer electronics, communications systems, and industrial applications, and can provide fast response time, low capacitance, and low clamping voltage protection. The diode utilizes the avalanche breakdown of a reverse-biased PN junction to provide reliable and effective protection.

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