SMDB03/TR7 Allicdata Electronics

SMDB03/TR7 Circuit Protection

Allicdata Part #:

SMDB03/TR7TR-ND

Manufacturer Part#:

SMDB03/TR7

Price: $ 2.07
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 3.3V 9V 8SO
More Detail: N/A
DataSheet: SMDB03/TR7 datasheetSMDB03/TR7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
500 +: $ 1.87774
Stock 1000Can Ship Immediately
$ 2.07
Specifications
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Base Part Number: SMDB
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 600pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 300W
Series: TVSarray™
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 4V
Voltage - Reverse Standoff (Typ): 3.3V
Unidirectional Channels: 4
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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SMDB03/TR7 is a kind of TVS - Diodes, usually housed in an antistatic disc-package. It is typically used for the protection of transient/surge events in order to protect downstream components from damage.The working principle of SMDB03/TR7 rests on the concept of breakdown voltage. Its breakdown voltage is related to an avalanche effect. When a current higher than the breakdown voltage exceeds it, the level of voltage that needs to be maintained for the current to continue flowing increases rapidly. This process is known as the avalanche effect.The avalanche effect is created by electrons that are accelerated to high energies by an electric field within the device. When these accelerated electrons collide with atoms, they create secondary electrons that create additional electric fields that raise the voltage even further. This process is called "avalanche" because the voltage increases exponentially, like an avalanche or snowball rolling down a hill.This avalanche effect is a bidirectional process, which means that the breakdown voltage can be exceeded either in a positive or negative direction. However, SMDB03/TR7 can be designed to prevent the negative breakdown voltage from being exceeded. In order to do this, the diode must be processed in such a way that it contains a high number of trapped positive charge carriers. The presence of these carriers increases the turn-on voltage, which in turn reduces the breakdown voltage and effectively blocks any reverse current. When SMDB03/TR7 is subjected to a high voltage, it will detect the sudden increase in voltage and responds by limiting the current and clamping the voltage to a safe level. Since it only takes a very small amount of current to start the avalanche process, the device will be able to respond quickly to any surges within the circuit and protect downstream components from damage.SMDB03/TR7 also has other features such as low capacitance and high dv/dt capability, which makes it suitable for use in a wide range of applications. These features make it ideal for use in telecommunications, data communication, computer peripherals, automotive electronics, consumer electronics, and portable electronic devices.In summary, SMDB03/TR7 is a very useful device for providing protection to downstream components from voltage transients. Its working principle relies on a breakdown voltage and its ability to detect and respond quickly to sudden changes in voltage. It also has features such as low capacitance and high dv/dt capability, which make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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